Add to ORKGIn the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring (TSQR) by using the plane wave basis. The results show that the electron energy levels are sensitively dependent on the TSQR's section thickness d, and insensitively dependent on TSQR's section inner radius R-1 and TSQR's inner radius R-2. The model and results provide useful information for the design and fabrication of InAs/GaAs TSQRs
We use a plane-wave technique to study the electron and hole wave functions in self-assembled InGaAs...
The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both exp...
The electronic structure of quantum rings is studied in the framework of the effective-mass theory a...
In the framework of effective mass envelope function theory, the electronic states of the InAs/GaAs ...
In the framework of effective-mass envelope function theory, the valence energy subbands and optical...
The electronic structures of self-assembled InAs1−xNx/GaAs nanostructures from quantum lens to quant...
The distribution of energy levels of the ground state and the low-lying excited states of hydrogenic...
We analyze theoretically the electron energy spectrum and the magnetization of an electron in a stra...
Stationary states of an electron in thin GaAs elliptical quantum rings are calculated within the eff...
A method for the calculation of the electronic structure of truncated-cone self-assemled InAs/GaAs q...
Abstract The electronic states of a GaAs elliptic quantum ring embedded in AlxGa1-xAs matrix are inv...
Electron and hole effective masses in self-assembled InAs/GaAs quantum dots are determined by fittin...
The electronic structures of N quantum dot molecules (QDMs) are investigated theoretically in the fr...
The composition profile of self-assembled InAs/GaAs quantum rings is investigated both experimentall...
ABSTRACT Semiconductor quantum dots have been of major interest in recent years. This has largely be...
We use a plane-wave technique to study the electron and hole wave functions in self-assembled InGaAs...
The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both exp...
The electronic structure of quantum rings is studied in the framework of the effective-mass theory a...
In the framework of effective mass envelope function theory, the electronic states of the InAs/GaAs ...
In the framework of effective-mass envelope function theory, the valence energy subbands and optical...
The electronic structures of self-assembled InAs1−xNx/GaAs nanostructures from quantum lens to quant...
The distribution of energy levels of the ground state and the low-lying excited states of hydrogenic...
We analyze theoretically the electron energy spectrum and the magnetization of an electron in a stra...
Stationary states of an electron in thin GaAs elliptical quantum rings are calculated within the eff...
A method for the calculation of the electronic structure of truncated-cone self-assemled InAs/GaAs q...
Abstract The electronic states of a GaAs elliptic quantum ring embedded in AlxGa1-xAs matrix are inv...
Electron and hole effective masses in self-assembled InAs/GaAs quantum dots are determined by fittin...
The electronic structures of N quantum dot molecules (QDMs) are investigated theoretically in the fr...
The composition profile of self-assembled InAs/GaAs quantum rings is investigated both experimentall...
ABSTRACT Semiconductor quantum dots have been of major interest in recent years. This has largely be...
We use a plane-wave technique to study the electron and hole wave functions in self-assembled InGaAs...
The surface composition profiles of self-assembled InAs/GaAs quantum rings (QR) are studied both exp...
The electronic structure of quantum rings is studied in the framework of the effective-mass theory a...