Add to ORKGHexagonal GaN is grown on a Si(111) substrate with AlN as a buffer layer by gas source molecular beam epitaxy (GSMBE) with ammonia. The thickness of AlN buffer is changed from 9 to 72 nm. When the thickness of AlN buffer is 36 nm, the surface morphology and crystal quality of GaN is optimal. The in-situ reflection high energy electron diffraction (RHEED) reveals that the transition to a two-dimensional growth mode of AlN is the key to the quality of GaN. However, the thickness of AlN buffer is not so critical to the residual in-plane tensile stress in GaN grown on Si(111) by GSMBE for AlN thickness between 9 to 72 nm
GaN epilayers on AlN buffer layers with various thicknesses were grown on sapphire substrates by usi...
GaN epilayers have been grown on Si(111) substrates with various high temperature AlN buffer layers ...
We present a study on the material properties of GaN films grown on (111) silicon substrates by low-...
We describe the growth of GaN on Si(111) substrates with AlxGa1-xN/AlN buffer layer by ammonia gas s...
The structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm diameter Si (...
We studied the influence of high temperature AlN buffer thickness on the property of GaN film on Si ...
The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown...
We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiche...
We describe the growth of GaN on Si (111) substrates with a AlGaN/AlN buffer layer by NH3-GSMBE. The...
The influences of AlN buffer thickness on the optical and the crystalline properties of metalorganic...
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer betwee...
The effect of the N/Al ratio of AlN buffers on the optical and crystal quality of GaN films, grown b...
A comparison of gallium-nitride (GaN) films grown on large-area Si(111) using a single aluminum-nitr...
The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density and its...
A medium-temperature/high-temperature (MT/HT) bilayer AlN buffer was introduced for GaN grown on Si(...
GaN epilayers on AlN buffer layers with various thicknesses were grown on sapphire substrates by usi...
GaN epilayers have been grown on Si(111) substrates with various high temperature AlN buffer layers ...
We present a study on the material properties of GaN films grown on (111) silicon substrates by low-...
We describe the growth of GaN on Si(111) substrates with AlxGa1-xN/AlN buffer layer by ammonia gas s...
The structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm diameter Si (...
We studied the influence of high temperature AlN buffer thickness on the property of GaN film on Si ...
The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown...
We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiche...
We describe the growth of GaN on Si (111) substrates with a AlGaN/AlN buffer layer by NH3-GSMBE. The...
The influences of AlN buffer thickness on the optical and the crystalline properties of metalorganic...
Crack-free GaN epitaxial layer was obtained through inserting 80 nm graded AlGaN buffer layer betwee...
The effect of the N/Al ratio of AlN buffers on the optical and crystal quality of GaN films, grown b...
A comparison of gallium-nitride (GaN) films grown on large-area Si(111) using a single aluminum-nitr...
The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density and its...
A medium-temperature/high-temperature (MT/HT) bilayer AlN buffer was introduced for GaN grown on Si(...
GaN epilayers on AlN buffer layers with various thicknesses were grown on sapphire substrates by usi...
GaN epilayers have been grown on Si(111) substrates with various high temperature AlN buffer layers ...
We present a study on the material properties of GaN films grown on (111) silicon substrates by low-...