The need for energy efficiency and lower emissions from industrial plants and infrastructures is driving research into novel sensor technologies, especially those that allow observing and measuring greenhouse gases, such as CO2CO2. CO2CO2 emissions can be captured using mid-infrared imagers, but at present, these are based on hybrid technologies that need expensive manufacturing and require cooling. The high price tag prevents a wider diffusion of mid-infrared imagers and hence their use for many low-cost and large-volume applications. Here we report a monolithic III-V technology that integrates GaAs transistors with an InSb photodiode array. The monolithic material system reduces costs and provides an excellent platform for the sensor syst...
We present indium antimonide-based devices for mid-infrared (mid-IR) detection with enhanced sensiti...
Abstract: At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window...
A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 ...
The need for energy efficiency and lower emissions from industrial plants and infrastructures is dri...
The need for energy efficiency and lower emissions from industrial plants and infrastructures is dri...
The use of Mid-infrared (mid-IR) imagers has great potential for a number of applications in gas sen...
Medium wavelength infrared detectors are of increasing importance in defense, security, commercial a...
We present the monolithic fabrication of an active photo-pixel made in InSb on a GaAs substrate that...
Antimonide-based photodetectors have recently been grown on a GaAs substrate by molecular beam epita...
Medium wavelength infrared (MWIR) detectors are of increasing importance in defense, security, comme...
We describe the development and optical characterization of a planar medium infrared (mid-IR) InSb p...
We describe the development and optical characterization of a planar medium infrared (mid-IR) InSb p...
We demonstrate the monolithic integration of an active photo-pixel made in InSb on a GaAs substrate....
We present indium antimonide-based devices for mid-infrared (mid-IR) detection with enhanced sensiti...
Abstract: At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window...
A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 ...
The need for energy efficiency and lower emissions from industrial plants and infrastructures is dri...
The need for energy efficiency and lower emissions from industrial plants and infrastructures is dri...
The use of Mid-infrared (mid-IR) imagers has great potential for a number of applications in gas sen...
Medium wavelength infrared detectors are of increasing importance in defense, security, commercial a...
We present the monolithic fabrication of an active photo-pixel made in InSb on a GaAs substrate that...
Antimonide-based photodetectors have recently been grown on a GaAs substrate by molecular beam epita...
Medium wavelength infrared (MWIR) detectors are of increasing importance in defense, security, comme...
We describe the development and optical characterization of a planar medium infrared (mid-IR) InSb p...
We describe the development and optical characterization of a planar medium infrared (mid-IR) InSb p...
We demonstrate the monolithic integration of an active photo-pixel made in InSb on a GaAs substrate....
We present indium antimonide-based devices for mid-infrared (mid-IR) detection with enhanced sensiti...
Abstract: At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window...
A 1,024 x 1,024-pixel array of quantum-well infrared photodetectors (QWIPs) has been built on a 1.8 ...