In 1985 it was first reported that monoclinic Ta2O5 has piezoelectric properties comparable to ZnO. In this work we report on the deposition, characterization, and qualitative assessment of the piezoelectric behavior of orthorhombic Ta2O5. Reactive magnetron sputtering was used to deposit thin films of Ta2O5 onto substrates of 316L stainless steel. Without substrate heating the crystallinity was poor. A rapid thermal anneal improved the crystallinity. The orthorhombic phase was dominantly present on all substrates. The piezoelectric property was qualitatively assessed, including a high temperature test at 650 °C
[[abstract]]The high-k Ta2O5 films deposited on the polycrystalline silicon treated with different p...
The structural and electrical properties of Ta2O5/65 nm SiO2 structures with different thicknesses o...
Tantalum pentoxide (Ta~Q) films were reactively sputter deposited from a tantalum target using Ar/O ...
In 1985 it was first reported that monoclinic Ta2O5 has piezoelectric properties comparable to ZnO. ...
Piezoelectric transducers are used extensively as acoustic sensors and actuators in the non-destruct...
Piezoelectric transducers are used extensively as acoustic sensors and actuators in the non-destruct...
Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 degrees C...
Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 degrees C...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have ...
[[abstract]]The high-k Ta2O5 films deposited on the polycrystalline silicon treated with different p...
Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have ...
For large-scale integration of devices, due to the problems associated with very thin layers of SiO2...
The change in the thickness and chemical states of the interfacial layer and the related electrical ...
[[abstract]]The high-k Ta2O5 films deposited on the polycrystalline silicon treated with different p...
The structural and electrical properties of Ta2O5/65 nm SiO2 structures with different thicknesses o...
Tantalum pentoxide (Ta~Q) films were reactively sputter deposited from a tantalum target using Ar/O ...
In 1985 it was first reported that monoclinic Ta2O5 has piezoelectric properties comparable to ZnO. ...
Piezoelectric transducers are used extensively as acoustic sensors and actuators in the non-destruct...
Piezoelectric transducers are used extensively as acoustic sensors and actuators in the non-destruct...
Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 degrees C...
Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 degrees C...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have ...
[[abstract]]The high-k Ta2O5 films deposited on the polycrystalline silicon treated with different p...
Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have ...
For large-scale integration of devices, due to the problems associated with very thin layers of SiO2...
The change in the thickness and chemical states of the interfacial layer and the related electrical ...
[[abstract]]The high-k Ta2O5 films deposited on the polycrystalline silicon treated with different p...
The structural and electrical properties of Ta2O5/65 nm SiO2 structures with different thicknesses o...
Tantalum pentoxide (Ta~Q) films were reactively sputter deposited from a tantalum target using Ar/O ...