Observation of abnormal (against the applied electric field) domain switching in Pb(ZrxTi1−x)O3 films by piezoresponse force microscopy is reported. In some grains polarization orients opposite to the external field in the presence of the applied field, while the rest of the film volume switches in a normal way. This effect is observed in thin film capacitors which excludes charge injection effect and spontaneous backswitching due the built-in field, which is the possible reason for this behavior. The abnormal switching behavior is attributed to the charge compensation effect at the boundaries of the grains with rhombohedral structure
Piezoresponse force microscopy (PFM) has been used to study the polarization stability in micrometer...
The origin of a recently reported peculiar phenomenon-polarization reversal against the applied elec...
Electric-field switching of polarization is the building block of a wide variety of ferroelectric de...
Observation of abnormal (against the applied electric field) domain switching in Pb(ZrxTi1−x)O3 film...
Scanning force microscopy (SFM) has been used to perform nanoscale studies of the switching behavior...
Scanning force microscopy (SFM) has been used to perform nanoscale studies of the switching behavior...
Scanning force microscopy has been used to perform a comparative nanoscale study of domain structure...
Scanning force microscopy has been used to perform a comparative nanoscale study of domain structure...
MasterThe ferroelectric domain switching is widely investigated as an enabling phenomenon of non-vol...
This thesis will focus on the switching behavior of nanoscale ferroelectric domains in polycrystalli...
A mechanism for the switching behavior of (111)-oriented Pb(Zr, Ti)O3-based 1 × 1.5 μm2 capacitors h...
Piezoresponse force microscopy (PFM) has been used to study the polarization stability in micrometer...
A mechanism for the switching behavior of (111)-oriented Pb(Zr, Ti)O3-based 1 × 1.5 μm2 capacitors h...
A mechanism for the switching behavior of (111)-oriented Pb(Zr,Ti)O3-based 1×1.5 μm2 capacitors has ...
A lead zirconate titanate Pb(Zr0.4Ti0.6)O 3 (PZT40/60) film was deposited on a Pt(111)/Ti/SiO 2/Si(1...
Piezoresponse force microscopy (PFM) has been used to study the polarization stability in micrometer...
The origin of a recently reported peculiar phenomenon-polarization reversal against the applied elec...
Electric-field switching of polarization is the building block of a wide variety of ferroelectric de...
Observation of abnormal (against the applied electric field) domain switching in Pb(ZrxTi1−x)O3 film...
Scanning force microscopy (SFM) has been used to perform nanoscale studies of the switching behavior...
Scanning force microscopy (SFM) has been used to perform nanoscale studies of the switching behavior...
Scanning force microscopy has been used to perform a comparative nanoscale study of domain structure...
Scanning force microscopy has been used to perform a comparative nanoscale study of domain structure...
MasterThe ferroelectric domain switching is widely investigated as an enabling phenomenon of non-vol...
This thesis will focus on the switching behavior of nanoscale ferroelectric domains in polycrystalli...
A mechanism for the switching behavior of (111)-oriented Pb(Zr, Ti)O3-based 1 × 1.5 μm2 capacitors h...
Piezoresponse force microscopy (PFM) has been used to study the polarization stability in micrometer...
A mechanism for the switching behavior of (111)-oriented Pb(Zr, Ti)O3-based 1 × 1.5 μm2 capacitors h...
A mechanism for the switching behavior of (111)-oriented Pb(Zr,Ti)O3-based 1×1.5 μm2 capacitors has ...
A lead zirconate titanate Pb(Zr0.4Ti0.6)O 3 (PZT40/60) film was deposited on a Pt(111)/Ti/SiO 2/Si(1...
Piezoresponse force microscopy (PFM) has been used to study the polarization stability in micrometer...
The origin of a recently reported peculiar phenomenon-polarization reversal against the applied elec...
Electric-field switching of polarization is the building block of a wide variety of ferroelectric de...