We report here for the first time ellipsometric measurements on the wavelength and temperature dependence of the complex refractive index, n-ik, of Zircaloy 2 and 4; the refractive index n and the extinction coefficient k. These were found to range from 1.135-i1.523 at 0.3131 (mu)m wavelength to 4.846-i7.345 at 3.39 (mu)m. These values are close to those reported in the literature for zirconium. The similarity in values is not unexpected because Zircaloy is approximately 98% zirconium. In the same wavelength range the complex refractive index of Zircaloy oxide was also determined. n varies from 2.3 at 0.3131 (mu)m to about 2.0 at 3.39 (mu)m. These results are also similar to literature values for zirconium oxide. Unlike zirconium oxide, for...
In this paper, we have investigated photoluminescence and photocatalytic properties of zirconia film...
In this paper, ZrO2 thin films were grown on glass substrates using RF magnetic sputtering method. I...
ZnO:Al films were fabricated by transition mode sputtering at various working points, and their opti...
We report here for the first time ellipsometric measurements on the wavelength and temperature depen...
Vacuum ultraviolet spectroscopic ellipsometry (VUV SE) was developed with a multichannel detection s...
International audienceThe oxidation of iron and chromium that are present as impurities in zirconium...
Zirconium oxide (ZrO 2 ) is suggested as a good candidate for a high-k dielectric. For the storage ...
Zirconium oxide (ZrO(2)) is one of the candidate materials for the high-k dielectrics used in Dynami...
AbstractZrO2 thin films deposited on silicon wafer and glass substrate by dc magnetron sputtering wi...
Zirconia films were prepared on silica glass substrates from the precursor solution of zirconium oxy...
The objective of this thesis is to determine the optical properties of ZnO thin films with spectrosc...
AbstractFilm characterization based on spectroscopic ellipsometry (SE) is desirable in order to unde...
Abstract: Spectroscop ic ellip sometry ( SE) was emp loyed to characterize ZnO thin film s p repared...
Abstract: This communication presents waveguide Raman spectra of ZrO2 thin films. The evolution of s...
WOS: 000176128800007A complete optical characterization in the visible region of thin copper oxide f...
In this paper, we have investigated photoluminescence and photocatalytic properties of zirconia film...
In this paper, ZrO2 thin films were grown on glass substrates using RF magnetic sputtering method. I...
ZnO:Al films were fabricated by transition mode sputtering at various working points, and their opti...
We report here for the first time ellipsometric measurements on the wavelength and temperature depen...
Vacuum ultraviolet spectroscopic ellipsometry (VUV SE) was developed with a multichannel detection s...
International audienceThe oxidation of iron and chromium that are present as impurities in zirconium...
Zirconium oxide (ZrO 2 ) is suggested as a good candidate for a high-k dielectric. For the storage ...
Zirconium oxide (ZrO(2)) is one of the candidate materials for the high-k dielectrics used in Dynami...
AbstractZrO2 thin films deposited on silicon wafer and glass substrate by dc magnetron sputtering wi...
Zirconia films were prepared on silica glass substrates from the precursor solution of zirconium oxy...
The objective of this thesis is to determine the optical properties of ZnO thin films with spectrosc...
AbstractFilm characterization based on spectroscopic ellipsometry (SE) is desirable in order to unde...
Abstract: Spectroscop ic ellip sometry ( SE) was emp loyed to characterize ZnO thin film s p repared...
Abstract: This communication presents waveguide Raman spectra of ZrO2 thin films. The evolution of s...
WOS: 000176128800007A complete optical characterization in the visible region of thin copper oxide f...
In this paper, we have investigated photoluminescence and photocatalytic properties of zirconia film...
In this paper, ZrO2 thin films were grown on glass substrates using RF magnetic sputtering method. I...
ZnO:Al films were fabricated by transition mode sputtering at various working points, and their opti...