Add to ORKGThe syntheses and characterization of both tris(diethylamino)aluminum and tris(diisopropylamino)aluminum are presented in this letter. Characterization includes vapor pressure measurements and comparison of the two non-pyrophoric precursors showing them to be viable alternatives to trimethylaluminum. Ultimately, tris(diisopropyl)aluminum was successful in the atomic layer deposition of alumina thin films
A heteroleptic amidoalane precursor is presented as a more suitably designed candidate to replace tr...
Präkursoren für die Atomlagenabscheidung (ALD) müssen volatil, thermisch stabil und reaktiv sein. In...
where the asterisks designate the surface species. Growth of stoichiometric Al2O3 thin films with ca...
The syntheses and characterization of both tris(diethylamino)aluminum and tris(diisopropylamino)alum...
Aluminum oxide and aluminum nitride-containing films were grown by atomic layer deposition (ALD) and...
Due to the safety challenges associated with the use of trimethylaluminum as a metal precursor for t...
The aluminum precursor plays a crucial role in the Al2O3 ALD process. To date, trimethylaluminum (TM...
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor tri...
The aluminum precursor plays a crucial role in the Al2O3 ALD process. To date, trimethylaluminum (TM...
Amidinate and guanidinate ligands have been used extensively to produce volatile and thermally stabl...
An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most common...
In this work we used atomic layer deposition (ALD) method to obtain thin films of AlN using tris(die...
Thin films of very high purity aluminum were formed from the laser photolysis of trimethylamine alan...
The authors have been investigating the use of [Al(CH3)2(µ-OiPr)]2 (DMAI) as an alternative Al precu...
This paper presents results on aluminum oxide thin films processed using metal–organic (MO) CVD from...
A heteroleptic amidoalane precursor is presented as a more suitably designed candidate to replace tr...
Präkursoren für die Atomlagenabscheidung (ALD) müssen volatil, thermisch stabil und reaktiv sein. In...
where the asterisks designate the surface species. Growth of stoichiometric Al2O3 thin films with ca...
The syntheses and characterization of both tris(diethylamino)aluminum and tris(diisopropylamino)alum...
Aluminum oxide and aluminum nitride-containing films were grown by atomic layer deposition (ALD) and...
Due to the safety challenges associated with the use of trimethylaluminum as a metal precursor for t...
The aluminum precursor plays a crucial role in the Al2O3 ALD process. To date, trimethylaluminum (TM...
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor tri...
The aluminum precursor plays a crucial role in the Al2O3 ALD process. To date, trimethylaluminum (TM...
Amidinate and guanidinate ligands have been used extensively to produce volatile and thermally stabl...
An Al2O3 thin film has been grown by vapor deposition using different Al precursors. The most common...
In this work we used atomic layer deposition (ALD) method to obtain thin films of AlN using tris(die...
Thin films of very high purity aluminum were formed from the laser photolysis of trimethylamine alan...
The authors have been investigating the use of [Al(CH3)2(µ-OiPr)]2 (DMAI) as an alternative Al precu...
This paper presents results on aluminum oxide thin films processed using metal–organic (MO) CVD from...
A heteroleptic amidoalane precursor is presented as a more suitably designed candidate to replace tr...
Präkursoren für die Atomlagenabscheidung (ALD) müssen volatil, thermisch stabil und reaktiv sein. In...
where the asterisks designate the surface species. Growth of stoichiometric Al2O3 thin films with ca...