We investigate the elastic properties of selected zinc-blende III-V semiconductors. Using hybrid functional density functional theory, we calculate the second- and third-order elastic constants and first- and second-order internal strain tensor components for Ga, In, and Al containing III-V compounds. For many of these parameters, there are no available experimental measurements, and this work is the first to predict their values. The stricter convergence criteria for the calculation of higher-order elastic constants are demonstrated, and arguments are made based on this for extracting these constants via the calculated stresses, rather than the energies, in the context of plane-wave-based calculations. The calculated elastic properties are...
Structural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the fir...
A systematic density functional theory study of strain effects on the electronic band structure of t...
833-836The recently proposed model potential which includes covalent correction terms, is employed ...
We investigate the elastic properties of selected zinc-blende III-V semiconductors. Using hybrid fun...
In this paper we present a method of calculating third-order elastic constants C$\text{}_{ijk}$ and ...
We derive first- and second-order piezoelectric coefficients for the zinc-blende III-V semiconductor...
International audienceA symmetry-based thermodynamical model of third-order electro-elastic coupling...
The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated...
The second-order elastic constants, third-order elastic constants, and the generalized-stacking-faul...
We present theoretical studies of the linear-k strain induced spin splitting of the conduction band ...
We present a theoretical study of the structural properties, namely lattice constant, bulk modulus ...
The effects of external and internal strains and of defect charges on the formation of vacancies, an...
The band structure, density of states, elastic properties and thermal properties of semiconductor Ga...
In this work, a theoretical study of the elastic and electronic properties of III-N semiconductors i...
The effects of external and internal strains, and of defect charges on the formation of vacancies an...
Structural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the fir...
A systematic density functional theory study of strain effects on the electronic band structure of t...
833-836The recently proposed model potential which includes covalent correction terms, is employed ...
We investigate the elastic properties of selected zinc-blende III-V semiconductors. Using hybrid fun...
In this paper we present a method of calculating third-order elastic constants C$\text{}_{ijk}$ and ...
We derive first- and second-order piezoelectric coefficients for the zinc-blende III-V semiconductor...
International audienceA symmetry-based thermodynamical model of third-order electro-elastic coupling...
The elastic and dielectric properties of binary III-N wurtzite semiconductors have been investigated...
The second-order elastic constants, third-order elastic constants, and the generalized-stacking-faul...
We present theoretical studies of the linear-k strain induced spin splitting of the conduction band ...
We present a theoretical study of the structural properties, namely lattice constant, bulk modulus ...
The effects of external and internal strains and of defect charges on the formation of vacancies, an...
The band structure, density of states, elastic properties and thermal properties of semiconductor Ga...
In this work, a theoretical study of the elastic and electronic properties of III-N semiconductors i...
The effects of external and internal strains, and of defect charges on the formation of vacancies an...
Structural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the fir...
A systematic density functional theory study of strain effects on the electronic band structure of t...
833-836The recently proposed model potential which includes covalent correction terms, is employed ...