Two Ultra-Low Power MM-Wave Push-Pull VCOs in FD-SOI CMOS

Two low-power mm-wave voltage controlled oscillators (VCOs) designed in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process are demonstrated, using a push-pull differential architecture. Measurement show that the first VCO has a 10.8% tuning rage centered at 30.3 GHz, and the second has a 8.9 % tuning range at 58.7 GHz. The 30 GHz VCO consumes 1.06 mW from a 1 V supply, and has a -119 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -188.4 dB. The 60 GHz VCO consumes 1.35 mW and has a -111.9 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -186.2 dB. Their active areas are 0.03 mm 2 and 0.096 mm 2 respectively