Raman spectroscopy used to assess the temperature and mechanical stress in thin films of microelectronic structures

We are grateful to the scientific grant agency of the Ministry of Education, Science, Research and Sport of the Slovak Republic for financial support of project VEGA No. 1/0947/16.In this experimental work we examined the temperature and mechanical stress in the thin films of microelectronic structures based on GaN and AlN by Raman spectroscopy. The rise in temperature in the Raman spectrum is shown by shifting the Raman bands toward lower wavenumbers. Similarly like with changes of temperature, the changes of the positions of Raman bands may indicate the changes of mechanical stress in the structure. It was confirmed experimentally that in the case of tensile stress the Raman bands are shifted towards lower wavenumbers, and under compressive stress to higher wavenumbers