Dispersion-engineered silicon nitride waveguides for mid-infrared supercontinuum generation covering the wavelength range 0.8-6.5 mu m

We numerically demonstrate the generation of a mid-infrared supercontinuum (SC) through the design of an on-chip complementary metal oxide semiconductor (CMOS) compatible 10-mm-long air-clad rectangular waveguide made using stoichiometric silicon nitride (Si 3 N 4 ) as the core and MgF 2 glass as its lower cladding. The proposed waveguide is optimized for pumping in both the anomalous and all-normal dispersion regimes. A number of waveguide geometries are optimized for pumping at 1.55 μ m with ultrashort pulses of 50-fs duration and a peak power of 5 kW. By initially keeping the thickness constant at 0.8 μ m, four different structures are engineered with varying widths between 3 μ m and 6 μ m. The largest SC spectral evolution covering a region of 0.8 μ m to beyond 6.5 μ m could be realized by a waveguide geometry with a width of 3 μ m. Numerical analysis shows that increasing width beyond 3 μ m by fixing thickness at 0.8 μ m results in a reduction of the SC extension in the long wavelength side. However, the SC spectrum can be enhanced beyond 6.5 μ m by increasing the waveguide thickness beyond 0.9 μ m with the same peak power and pump source. To the best of our knowledge, this is first time report of a broad SC spectral evolution through numerical demonstration in the mid-infrared region by the silicon nitride waveguide. In the case of all-normal dispersion pumping, a flatter SC spectra can be predicted with the same power and pump pulse but with a reduced bandwidth spanning 950–2100 nm