Defects study in IR SWIR HgCdTe photodetectors using DLTS
- Brunner, A.
- Rubaldo, L.
- Berthoz, J.
- Bauza, D.
- Reimbold, G.
Publication date
July 2014
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceThe traps in IR SWIR HgCdTe n + /p photodetectors are studied using DLTS. Two hole trap are found, one at low temperature (E a ≈ 0.19 eV) and the other above 250K. The low temperature peak is found to allow the fitting of dark current data recorded from different samples
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