In this work we study the optical properties of the ternary compound CuInSe2 and CuGaSe2 using the DFT and FP-LAPW method. These materials are important to have applications in non lineal optics in the construction of infrared detectors and solar cells polycrystalline based on thin films of high efficiency and low cost where are used like active layer. Therefore, it is important to know so much theoretical as experimentally their optic properties (complex dielectric tensor, complex refraction index and absorption coefficient).En este trabajo estudiamos las propiedades ópticas de los compuestos ternarios CuInSe2 y CuGa- Se2 usando DFT y FP-LAPW. Estos materiales son importantes por tener aplicaciones en óptica no lineal en la construcción de...
Polykristalline Cu(In,Ga)Se2- und Cu(In,Ga)S2-Dünnschichten werden als Absorbermaterial in hocheffiz...
To accelerate environmentally friendly thin film photovoltaic (PV) technologies, copper-based chalco...
The electronic and optical properties of Cu2ZnGeS4 are calculated by means of the full potential lin...
We present dielectric-function-related optical properties such as absorption coefficient, refractive...
The aim of this work is to study the structural and optical properties of Cu(In,Ga)Se2 (CIGS) thin f...
Thin film samples of Cu(In,Ga)Se2 (CIGS) were prepared at room temperature by physical vapor deposit...
Thin films of the chalcopyrite compound CuGaXIn1-XTe2 (0=<X=<1) have been prepared by pulsed...
CuInSe₂, CuInS₂ and CuGaSe₂ are I-III-VI₂ compound semiconductors with a chalcopyrite structure. The...
The performance of solar cells fabricated using Cu(In,Ga)(S,Se)2 nanocrystal (NC) inks synthesized u...
International audienceIn this study, we investigated the effect of the chemical ratios (x=Ga/In+Ga) ...
Ternary semiconductor compounds of AIBIIICVI2 type with different structural, electrical and optical...
The solar energy is converted to electricity using photovoltaic cells or solar cell concentrators. ...
CuIn1-xGaxSe2 (CIGS) thin films with chemical concentrations varying between x=0 and x=1 were grown ...
Theoretical considerations for the use of chalcopyrite ternary I-III-VI₂ compounds in heterojunction...
A review of several optical and structural parameters of CuInSe2 (CIS) and various CuInxSey Ordered ...
Polykristalline Cu(In,Ga)Se2- und Cu(In,Ga)S2-Dünnschichten werden als Absorbermaterial in hocheffiz...
To accelerate environmentally friendly thin film photovoltaic (PV) technologies, copper-based chalco...
The electronic and optical properties of Cu2ZnGeS4 are calculated by means of the full potential lin...
We present dielectric-function-related optical properties such as absorption coefficient, refractive...
The aim of this work is to study the structural and optical properties of Cu(In,Ga)Se2 (CIGS) thin f...
Thin film samples of Cu(In,Ga)Se2 (CIGS) were prepared at room temperature by physical vapor deposit...
Thin films of the chalcopyrite compound CuGaXIn1-XTe2 (0=<X=<1) have been prepared by pulsed...
CuInSe₂, CuInS₂ and CuGaSe₂ are I-III-VI₂ compound semiconductors with a chalcopyrite structure. The...
The performance of solar cells fabricated using Cu(In,Ga)(S,Se)2 nanocrystal (NC) inks synthesized u...
International audienceIn this study, we investigated the effect of the chemical ratios (x=Ga/In+Ga) ...
Ternary semiconductor compounds of AIBIIICVI2 type with different structural, electrical and optical...
The solar energy is converted to electricity using photovoltaic cells or solar cell concentrators. ...
CuIn1-xGaxSe2 (CIGS) thin films with chemical concentrations varying between x=0 and x=1 were grown ...
Theoretical considerations for the use of chalcopyrite ternary I-III-VI₂ compounds in heterojunction...
A review of several optical and structural parameters of CuInSe2 (CIS) and various CuInxSey Ordered ...
Polykristalline Cu(In,Ga)Se2- und Cu(In,Ga)S2-Dünnschichten werden als Absorbermaterial in hocheffiz...
To accelerate environmentally friendly thin film photovoltaic (PV) technologies, copper-based chalco...
The electronic and optical properties of Cu2ZnGeS4 are calculated by means of the full potential lin...