The mechanical properties of amorphous silicon carbonitride (SiCxNy) films with various nitrogen content (y = 0-40 at.%) were investigated in-situ at elevated temperatures up to 650 °C in inert atmosphere. The hardness and elastic modulus were evaluated using depth sensing nanoindentation with cubic boron nitride Berkovich indenter. Both the sample and indenter were separately heated during the experiments to temperatures 300, 500 and 650 °C. Short duration high temperature creep (1200 s) of the films was also investigated. The results revealed that the room temperature hardness and elastic modulus decline with the increase of the nitrogen content. Furthermore, the hardness of both SiC and SiCN films with lower nitrogen concentration at 300...
The mechanical behaviour of different silicon nitride materials were evaluated with emphasis placed ...
With the rapid increase in miniaturization of mechanical components, the need for a hard, protective...
SiCN films have been produced along the tie line SiC–Si3N4, SiC–C3N4 and Si3N4–C3N4 by means of reac...
The effect of deposition conditions on characteristic mechanical properties – elastic modulus and ha...
Nanoindentation has revealed significant scatter of the microscale hardness and elastic modulus of a...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
Amorphous silicon carbide (a-SiC) and silicon carbonitride thin films have been deposited onto a var...
Silicon carbonitride thin films of 480 to 730-nm thicknesses were grown on silicon substrate using a...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
The creep viscosity of chemical-precursor-derived silicon carbonitride (SiCN), which is known to rem...
Silicon carbonitride thin films were obtained by plasma-enhanced chemical vapor deposition using na-...
Preliminary studies have been performed on the feasibility of carbon-silicon nitride formation ({bet...
An influence of substrate temperature on the properties of SiCN films deposited on silicon substrate...
Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of ...
There is a technological need for hard thin films with high elastic modulus. Silicon Carbide (SiC) f...
The mechanical behaviour of different silicon nitride materials were evaluated with emphasis placed ...
With the rapid increase in miniaturization of mechanical components, the need for a hard, protective...
SiCN films have been produced along the tie line SiC–Si3N4, SiC–C3N4 and Si3N4–C3N4 by means of reac...
The effect of deposition conditions on characteristic mechanical properties – elastic modulus and ha...
Nanoindentation has revealed significant scatter of the microscale hardness and elastic modulus of a...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
Amorphous silicon carbide (a-SiC) and silicon carbonitride thin films have been deposited onto a var...
Silicon carbonitride thin films of 480 to 730-nm thicknesses were grown on silicon substrate using a...
Thin films of amorphous silicon carbide nitride (a-SiCxNy) were deposited in a rf magnetron sputteri...
The creep viscosity of chemical-precursor-derived silicon carbonitride (SiCN), which is known to rem...
Silicon carbonitride thin films were obtained by plasma-enhanced chemical vapor deposition using na-...
Preliminary studies have been performed on the feasibility of carbon-silicon nitride formation ({bet...
An influence of substrate temperature on the properties of SiCN films deposited on silicon substrate...
Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of ...
There is a technological need for hard thin films with high elastic modulus. Silicon Carbide (SiC) f...
The mechanical behaviour of different silicon nitride materials were evaluated with emphasis placed ...
With the rapid increase in miniaturization of mechanical components, the need for a hard, protective...
SiCN films have been produced along the tie line SiC–Si3N4, SiC–C3N4 and Si3N4–C3N4 by means of reac...