Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory

In recent years, resistance changes random access memory (RRAM) which shows reversible bistable resistance states by applied voltage has been studied as one of the alternatives of next-generation nonvolatile memory due to its excellent device characteristics including scalability, speed, and retention. Here, we report on the noncharge-based NiO RRAM device characteristics with load resistor as well as the simulation results of controlled conducting filament configuration. The RRAM device with load resistor showed super performances including highly reduction of switching current (similar to 1 order) and significantly improved switching voltage distribution (30% reduction).The work of B. S. Kang was supported by the grant from the National Research Foundation of Korea funded by the Korean Ministry of Education, Science, and Technology under Grant. 2012-0001684. The review of this paper was arranged by Associate Editor Y.-H. Cho