A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO2/Pt RS cell. The modified bias scheme included the application of bias voltages with alternating polarity, even though RS proceeds in non-polar mode, which results in the stable distribution of each resistance states as well as improved endurance. This was attributed to the minimized consumption of oxygen ions in the TiO2 film, which can be induced by the formation of hourglass-shaped conducting filament (HSCF). The presence of a HSCF was confirmed by high-resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600784]This study was supported by ...
ABSTRACT: TiO2 is being widely explored as an active resistive switching (RS) material for resistive...
Reversible and controllable conversion between unipolar and bipolar resistive switching (URS and BRS...
We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively...
The continuing improved performance of the digital electronic devices requires new memory technologi...
The bipolar resistive switching characteristics in polycrystalline TiO2 thin films after regular for...
The resistive switching characteristics of poly-crystal rutile TiO2-x thin film between Pt electrode...
Effect of the top electrode (TE) metal on the resistive switching of(TE)/TiO2/Pt structure was inves...
Herein, we developed a series of Pt/TiO2/Pt/Ti/SiO2 resistive switching materials with a variation i...
The resistive switching mechanism of 20- to 57-nm-thick TiO2 thin films grown by atomic-layer deposi...
Titanium dioxide thin films (30 nm) are deposited on platinized substrates by atomic layer depositio...
We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive swi...
TiO2 (oxygen rich, region 1)/TiO2-x (oxygen poor, region 2) multilayer homojunctions were studied as...
Resistive switching characteristics of low temperature sol-gel processed (250°C) Ti O2 thin films ar...
“Forming” is a stage in resistive switching (RS) devices that occurs before switching and represents...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
ABSTRACT: TiO2 is being widely explored as an active resistive switching (RS) material for resistive...
Reversible and controllable conversion between unipolar and bipolar resistive switching (URS and BRS...
We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively...
The continuing improved performance of the digital electronic devices requires new memory technologi...
The bipolar resistive switching characteristics in polycrystalline TiO2 thin films after regular for...
The resistive switching characteristics of poly-crystal rutile TiO2-x thin film between Pt electrode...
Effect of the top electrode (TE) metal on the resistive switching of(TE)/TiO2/Pt structure was inves...
Herein, we developed a series of Pt/TiO2/Pt/Ti/SiO2 resistive switching materials with a variation i...
The resistive switching mechanism of 20- to 57-nm-thick TiO2 thin films grown by atomic-layer deposi...
Titanium dioxide thin films (30 nm) are deposited on platinized substrates by atomic layer depositio...
We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive swi...
TiO2 (oxygen rich, region 1)/TiO2-x (oxygen poor, region 2) multilayer homojunctions were studied as...
Resistive switching characteristics of low temperature sol-gel processed (250°C) Ti O2 thin films ar...
“Forming” is a stage in resistive switching (RS) devices that occurs before switching and represents...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
ABSTRACT: TiO2 is being widely explored as an active resistive switching (RS) material for resistive...
Reversible and controllable conversion between unipolar and bipolar resistive switching (URS and BRS...
We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively...