Gate Voltage Comparating Scheme for Short-Circuit Fault Detection of IGBT

This paper represents a novel short-circuit detecting scheme comparating the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as fault under load(FUL) and hard switch-fault(HSF). The proposed short-circuit protection circuit consists of two parts. One is the difference generator part, which generates a difference between a gate-voltage and an input voltage. The other is the short-circuit fault detection part using a charged voltage of capacitor for short-circuit fault detection. The proposed scheme can be integrated as a gate drive integrated circuit(IC) or high voltage integrated circuit(HVIC) because the proposed protection circuit supplements logic and low-voltage component. The feasibility of the proposed scheme is verified by simulation result