SnO2 thin films grown by atomic layer deposition using a novel Sn precursor

SnO2 thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methy1-2-propoxytin(II) (Sn(dmamp)2) and 03 in a temperature range of 100-230 degrees C. The ALD window was found to be in the range of 100-200 degrees C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230 degrees C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp)(2) precursor. The SnO2 films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a SnO2 binding state corresponding to Sn4+ in SnO2. The concentration of carbon and nitrogen in the all SnO2 films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO2 films with respect to the growth temperature. The ALD process with Sn(dmamp)(2) and O-3 shows excellent conformality on a hole structure with an aspect ratio of 9. This demonstrates that the ALD process with Sn(dmamp)(2) and 03 is promising for growth of robust and highly pure SnO2 films. (C) 2014 Elsevier B.V. All rights reserved.This work was supported by the Future Semiconductor Device Technology Development Program (10047231) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium) and by the Korea Institute of Science and Technology (KIST through 2E24881)