We demonstrate a method of systematic analysis for the photocurrent spectroscopy on InGaN/GaN light-emitting diodes (LEDs). By normalizing photocurrent data at a photon energy of 3.2 eV for blue LEDs, we show that accurate comparison of active quantum wells is possible. Bias-dependent photocurrent measurements reveal that there are fixed points in photocurrent data from which an effective bandgap energy can be determined. The method presented in this paper can be useful when one needs to compare the LEDs fabricated at different times or by different processes.This work was supported by the Industrial Strategic Technology Development Program under Grant 10041878 funded by the Ministry of Knowledge Economy, Korea
The past decade has seen rapid expansion in the use of group III-nitride based devices. White InGaN ...
By focussing on the properties of InGaN/GaN quantum well (QW) LEDs the key physical processes releva...
We investigate the influence of p-(Al) GaN growth temperature (T-g) on the optoelectronic performanc...
We demonstrate a method of systematic analysis for the photocurrent spectroscopy on InGaN/GaN light-...
We experimentally and theoretically investigate the relationship between the electroreflectance (ER)...
The microscopic phenomena leading to degradation of blue LEDs under forward current stress have been...
This paper presents an extensive analysis of the electroluminescence spectra of InGaN-based LEDs, me...
Maximizing the performance of light-emitting diodes (LEDs) is essential for the widespread uptake of...
Dominant nonradiative recombination mechanisms as a function of nonradiative current were investigat...
Carrier injection and non-radiative processes are determinants of the optical efficiency of InGaN/Ga...
Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiativ...
Dominant nonradiative recombination mechanisms as a function of nonradiative current were investigat...
This dissertation presents measurements of the photocurrent in forward biased III-Nitride light emit...
Optical spectra of InGaN-based multiple quantum well test structures have been measured by complemen...
Theories of spontaneous emission rates and carrier recombination mechanisms for multiple-quantum-wel...
The past decade has seen rapid expansion in the use of group III-nitride based devices. White InGaN ...
By focussing on the properties of InGaN/GaN quantum well (QW) LEDs the key physical processes releva...
We investigate the influence of p-(Al) GaN growth temperature (T-g) on the optoelectronic performanc...
We demonstrate a method of systematic analysis for the photocurrent spectroscopy on InGaN/GaN light-...
We experimentally and theoretically investigate the relationship between the electroreflectance (ER)...
The microscopic phenomena leading to degradation of blue LEDs under forward current stress have been...
This paper presents an extensive analysis of the electroluminescence spectra of InGaN-based LEDs, me...
Maximizing the performance of light-emitting diodes (LEDs) is essential for the widespread uptake of...
Dominant nonradiative recombination mechanisms as a function of nonradiative current were investigat...
Carrier injection and non-radiative processes are determinants of the optical efficiency of InGaN/Ga...
Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiativ...
Dominant nonradiative recombination mechanisms as a function of nonradiative current were investigat...
This dissertation presents measurements of the photocurrent in forward biased III-Nitride light emit...
Optical spectra of InGaN-based multiple quantum well test structures have been measured by complemen...
Theories of spontaneous emission rates and carrier recombination mechanisms for multiple-quantum-wel...
The past decade has seen rapid expansion in the use of group III-nitride based devices. White InGaN ...
By focussing on the properties of InGaN/GaN quantum well (QW) LEDs the key physical processes releva...
We investigate the influence of p-(Al) GaN growth temperature (T-g) on the optoelectronic performanc...