Current-voltage (I-V) measurements on Al/Ni1-xFex nanoparticles embedded in polyimide/Al devices at 300 K showed a current bistability due to the existence of Ni1-xFex nanoparticles. The ON/OFF current ratio for the fabricated devices was about 10(2). The retention time data of the devices demonstrated charge trapping and detrapping processes. Carrier transport mechanisms of the devices are described on the basis of the I-V experimental and fitting results. (C) 2010 The Japan Society of Applied PhysicsThis work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R0A-2007-000-20044-0) and also by a grant (code: 2009K000474) from "Center for Nanostrucutred Materials Technology...
Transmission electron microscopy images showed that colloidal ZnO quantum dots (QDs) were distribute...
The electrical properties of a nonvolatile organic bistable device (OBD) utilizing Au quantum dots (...
Nonvolatile memory (NVM) devices based on a metal-insulator-metal structure consisting of CdSe/ZnS q...
Current-voltage (I-V) measurements on Al/Ni1-xFex nanoparticles embedded in polyimide/Al devices at ...
Organic bistable devices (OBDs) with CuInS2 (CIS) quantum dots (QDs) embedded in a poly(N-vinylcarba...
Nano-composite polymer memory devices are fabricated by depositing a blend (an admixture of organic ...
Current-voltage (I-V) characteristics and trap densities of organic bistable devices (OBDs) fabricat...
Organic bistable devices fabircated utilizing SnO2 nanoparticles embedded in a poly(methyl methacryl...
Organic bistable devices (OBDs) based on nanocomposites consisting of C-60 embedded in the poly(meth...
Current-voltage (I-V) measurements on Al/fullerene (C-60) molecules embedded in polymethyl methacryl...
Bistability is often observed in thin organic materials, but it is not a typical property of the bul...
The electrical bistabilities of core/shell CdSe/ZnS nanoparticles embedded in polystyrene (PS) and p...
We discuss three different models of switching between the high conductivity and low conductivity st...
An electrically bistable device has been fabricated using nanocomposite films consisting of silver n...
Current-voltage (I-V) curves for Al/fullerene (C-60) nanoparticles embedded in poly(methylmethacryla...
Transmission electron microscopy images showed that colloidal ZnO quantum dots (QDs) were distribute...
The electrical properties of a nonvolatile organic bistable device (OBD) utilizing Au quantum dots (...
Nonvolatile memory (NVM) devices based on a metal-insulator-metal structure consisting of CdSe/ZnS q...
Current-voltage (I-V) measurements on Al/Ni1-xFex nanoparticles embedded in polyimide/Al devices at ...
Organic bistable devices (OBDs) with CuInS2 (CIS) quantum dots (QDs) embedded in a poly(N-vinylcarba...
Nano-composite polymer memory devices are fabricated by depositing a blend (an admixture of organic ...
Current-voltage (I-V) characteristics and trap densities of organic bistable devices (OBDs) fabricat...
Organic bistable devices fabircated utilizing SnO2 nanoparticles embedded in a poly(methyl methacryl...
Organic bistable devices (OBDs) based on nanocomposites consisting of C-60 embedded in the poly(meth...
Current-voltage (I-V) measurements on Al/fullerene (C-60) molecules embedded in polymethyl methacryl...
Bistability is often observed in thin organic materials, but it is not a typical property of the bul...
The electrical bistabilities of core/shell CdSe/ZnS nanoparticles embedded in polystyrene (PS) and p...
We discuss three different models of switching between the high conductivity and low conductivity st...
An electrically bistable device has been fabricated using nanocomposite films consisting of silver n...
Current-voltage (I-V) curves for Al/fullerene (C-60) nanoparticles embedded in poly(methylmethacryla...
Transmission electron microscopy images showed that colloidal ZnO quantum dots (QDs) were distribute...
The electrical properties of a nonvolatile organic bistable device (OBD) utilizing Au quantum dots (...
Nonvolatile memory (NVM) devices based on a metal-insulator-metal structure consisting of CdSe/ZnS q...