Ternary content addressable memory (TCAM) is more susceptible to soft errors than static random access memory (SRAM). The large di/dt issue during comparison operation reduces operating voltage ranges, which in turn reduces soft error immunity. The tight structural coupling of TCAM comparison circuits and memory cells does not allow for an interleaving design scheme in mitigating soft errors. Regular scrubbing of stored content can greatly mitigate the reliability issue caused by soft errors. However, frequent scrubbing can also affect device performance. The scrubbing interval should be determined to facilitate both reliability and performance. This paper proposes a novel, model-based approach that includes both single-bit upsets (SBUs) an...