Advanced memories are designed using smaller geometries and lower voltages. This enables larger levels of integration and reduced power consumption, but makes memories more prone to suffer multibit soft errors. In this scenario, scrubbing is a fundamental technique to avoid the accumulation of errors, which would lead to a failure of the system. Scrubbing is usually implemented in advanced memories. However, when the percentage of multibit soft errors is significant, the scrubbing sequence (the order in which the memory is scrubbed) becomes important for the reliability of the system. In this paper, a new procedure to perform scrubbing is presented, which offers a significant improvement in the reliability. In the presence of multiple cell ...
We describe and analyze a non-volatile configuration memory system with high resistance to radiation...
Part I. Correction of Cell Defects in Integrated Memories: This paper introduces two schemes to corr...
MasterMulti-level cell (MLC) phase-change RAM (PRAM) is a promising candidate to enable a low cost m...
In this paper, we propose the use of ad-hoc scrubbing sequences to improve memory reliability. The k...
Ternary content addressable memory (TCAM) is more susceptible to soft errors than static random acce...
\u3cp\u3eSRAM-based FPGAs are widely used in many critical systems in which dependability is an esse...
Reliability is a critical issue for memories. Radiation particles that hit the device can cause erro...
SRAM-based FPGAs are widely used in many critical systems in which dependability is an essential fac...
As one of the most important components in the embedded systems, the SRAM are sensitive to radiation...
Scrubbing is a process in which a memory is systematically read, checked for errors, and corrected w...
Abstract—The reliability of memory systems that are exposed to soft errors has been studied in the p...
Inherently error-resilient applications in areas such as signal processing, machine learning and dat...
As memory technology scales, the demand for higher performance and reliable operation is increasing ...
Scrubbing is generally used in conjunction with triple modular redundancy (TMR) to increase the reli...
International audienceTechnological advances allow the production of increasingly complex electronic...
We describe and analyze a non-volatile configuration memory system with high resistance to radiation...
Part I. Correction of Cell Defects in Integrated Memories: This paper introduces two schemes to corr...
MasterMulti-level cell (MLC) phase-change RAM (PRAM) is a promising candidate to enable a low cost m...
In this paper, we propose the use of ad-hoc scrubbing sequences to improve memory reliability. The k...
Ternary content addressable memory (TCAM) is more susceptible to soft errors than static random acce...
\u3cp\u3eSRAM-based FPGAs are widely used in many critical systems in which dependability is an esse...
Reliability is a critical issue for memories. Radiation particles that hit the device can cause erro...
SRAM-based FPGAs are widely used in many critical systems in which dependability is an essential fac...
As one of the most important components in the embedded systems, the SRAM are sensitive to radiation...
Scrubbing is a process in which a memory is systematically read, checked for errors, and corrected w...
Abstract—The reliability of memory systems that are exposed to soft errors has been studied in the p...
Inherently error-resilient applications in areas such as signal processing, machine learning and dat...
As memory technology scales, the demand for higher performance and reliable operation is increasing ...
Scrubbing is generally used in conjunction with triple modular redundancy (TMR) to increase the reli...
International audienceTechnological advances allow the production of increasingly complex electronic...
We describe and analyze a non-volatile configuration memory system with high resistance to radiation...
Part I. Correction of Cell Defects in Integrated Memories: This paper introduces two schemes to corr...
MasterMulti-level cell (MLC) phase-change RAM (PRAM) is a promising candidate to enable a low cost m...