Current crowding effect is detrimental for the performance of light-emitting diodes (LEDs), causing non-uniform light emission and local heat generation. In particular, heat generated by non-uniform current distribution can badly influence the performance of LED devices. In this paper, we examine the temperature distributions of lateral InGaN/GaN multiple-quantum-well LEDs in relation to current crowding, using both simulation and experimental results. Simulation results are obtained from a 3-dimensional electrical circuit model consisting of resistances and intrinsic diodes. Temperature and luminance distributions are investigated by images taken by an infrared camera and a charge-coupled-device camera, respectively. Finally, the internal ...
Thermal circuit modeling is successfully established and utilized for analyzing the temperature dist...
Thermal circuit modeling is successfully established and utilized for analyzing the temperature dist...
We investigate the influence of carrier overflow on the forward-voltage characteristics of the InGaN...
Current crowding effect is detrimental for the performance of light-emitting diodes (LEDs), causing ...
The relationship between the thermal and luminance distributions in high-power lateral GaN/InGaN lig...
GaN-based light-emitting diodes (LEDs) became one of the most widely used light sources. One of thei...
Temperature-dependent internal quantum efficiency (IQE) of multiple quantum well InGaN/GaN light-em...
We demonstrate a modeling method based on the three-dimensional electrical and thermal circuit analy...
Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiativ...
The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes o...
External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been me...
We demonstrate that the efficiency droop phenomenon in multiple quantum well InGaN/GaN light-emitti...
Abstract — This paper exhibits systematic results for lateral light emitting diodes (LEDs) with vari...
Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with nu...
Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quan...
Thermal circuit modeling is successfully established and utilized for analyzing the temperature dist...
Thermal circuit modeling is successfully established and utilized for analyzing the temperature dist...
We investigate the influence of carrier overflow on the forward-voltage characteristics of the InGaN...
Current crowding effect is detrimental for the performance of light-emitting diodes (LEDs), causing ...
The relationship between the thermal and luminance distributions in high-power lateral GaN/InGaN lig...
GaN-based light-emitting diodes (LEDs) became one of the most widely used light sources. One of thei...
Temperature-dependent internal quantum efficiency (IQE) of multiple quantum well InGaN/GaN light-em...
We demonstrate a modeling method based on the three-dimensional electrical and thermal circuit analy...
Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiativ...
The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes o...
External quantum efficiency of industrial-grade green InGaN light-emitting diodes (LEDs) has been me...
We demonstrate that the efficiency droop phenomenon in multiple quantum well InGaN/GaN light-emitti...
Abstract — This paper exhibits systematic results for lateral light emitting diodes (LEDs) with vari...
Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with nu...
Temperature dependence of quantum efficiency of blue LED structures based on multiple InGaN/GaN quan...
Thermal circuit modeling is successfully established and utilized for analyzing the temperature dist...
Thermal circuit modeling is successfully established and utilized for analyzing the temperature dist...
We investigate the influence of carrier overflow on the forward-voltage characteristics of the InGaN...