The structural and magnetic properties of the Fe(0 0 1)/MgO(0 0 1)/Fe(0 0 1) magnetic tunnel junction (MTJ) with Mg vacancy at the interface were investigated using density functional theory. For a defect-free MTJ, the interfacial Fe-O distance was 2.06 angstrom and 13.8% of thickness reduction was found in electrode layers. For the Mg deficient MTJ system, the interfacial Mg atoms were positioned 0.19 angstrom below the O-interface atoms, resulting in the Fe-Mg distance of 1.74 angstrom. Each atomic slab exhibited large fluctuations of spin polarization values since complex slab separation occurred in both barrier and electrode layers. Specifically, the magnetic moment of 0.20 mu B was induced for O atoms at the interface slab. Large varia...
Defects play an important role in the properties of metal oxides which are currently used as barrier...
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions a...
We report an extensive first-principles investigation of impurity-induced device-to-device variabili...
Fe/MgO-based magnetic tunnel junctions are among the most promising candidates for spintronic device...
Équipe 101 : Nanomagnétisme et électronique de spinInternational audienceThe strong impact of molecu...
The prediction and experimental demonstration of a very large magnetoresistance in Fe/MgO/Fe tunnel ...
Fe/MgO-based magnetic tunnel junctions are among the most promising candidates for spintronic device...
Following predictions by first-principles theory of a huge tunnel magnetoresistance (TMR) effect in ...
The chemical, structural, and electronic properties of MgO/Fe001 and MgO/Fe001-p11O interfaces for m...
The chemical, structural, and electronic properties of MgO/Fe001 and MgO/Fe001-p11O interfaces for ...
We present a detailed structural characterization of the interfaces in Fe/MgO/Fe layers grown by mol...
Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.Interfacial effects...
Calculation of the tunneling magnetoresistance (TMR) of an epitaxial Fe/MgO/Fe(001) junction is repo...
We present preliminary results of our studies of the effects of oxides in the Fe/MgO interface of an...
Low-voltage spin-dependent tunneling spectroscopy of an epitaxial Fe/MgO/Fe magnetic tunnel junction...
Defects play an important role in the properties of metal oxides which are currently used as barrier...
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions a...
We report an extensive first-principles investigation of impurity-induced device-to-device variabili...
Fe/MgO-based magnetic tunnel junctions are among the most promising candidates for spintronic device...
Équipe 101 : Nanomagnétisme et électronique de spinInternational audienceThe strong impact of molecu...
The prediction and experimental demonstration of a very large magnetoresistance in Fe/MgO/Fe tunnel ...
Fe/MgO-based magnetic tunnel junctions are among the most promising candidates for spintronic device...
Following predictions by first-principles theory of a huge tunnel magnetoresistance (TMR) effect in ...
The chemical, structural, and electronic properties of MgO/Fe001 and MgO/Fe001-p11O interfaces for m...
The chemical, structural, and electronic properties of MgO/Fe001 and MgO/Fe001-p11O interfaces for ...
We present a detailed structural characterization of the interfaces in Fe/MgO/Fe layers grown by mol...
Under the terms of the Creative Commons Attribution License 3.0 (CC-BY).-- et al.Interfacial effects...
Calculation of the tunneling magnetoresistance (TMR) of an epitaxial Fe/MgO/Fe(001) junction is repo...
We present preliminary results of our studies of the effects of oxides in the Fe/MgO interface of an...
Low-voltage spin-dependent tunneling spectroscopy of an epitaxial Fe/MgO/Fe magnetic tunnel junction...
Defects play an important role in the properties of metal oxides which are currently used as barrier...
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions a...
We report an extensive first-principles investigation of impurity-induced device-to-device variabili...