Fabrication and characterization of a Cu seed layer on a 60-nm trench-patterned SiO2 substrate by a self-assembled-monolayer (SAM) process

Continuous electroless deposition of a 10-nm thick layer of Cu was successfully performed on a SiO2/Si substrate coated with a 3-nm Au catalytic layer. The Au catalytic layer was formed by a self-assembled monolayer (SAM) process terminated with NH2 headgroups, upon which negatively charged Au particles were deposited via electrostatic interaction with the positively charged NH2-SAM. The Au and NH2-SAM layers were analyzed by X-ray photoelectron spectroscopy (XPS) and contact angle analysis. Atomic force microscopy, field emission scanning electron microscopy, and XPS revealed that the Cu layer formed by this electroless processes had good step-coverage, small grain size, and excellent adhesion to the substrate. The proposed process is a very promising method for fabrication of a conductive Cu seed layer in a 60-nm trench-pattern. (C) 2009 Elsevier B. V. All rights reserved.This work was supported by the research fund of Hynix Semiconductor Inc. (2008)