We have developed a novel activation technique for the conformal electroless deposition (ELD) of Cu on a SiO(2) substrate modified with an organic self-assembled monolayer. The SiO(2) substrate was modified with amine groups using 3-aminopropyltriethoxysilane and Au nanoparticles (AuNPs) to form a uniform, continuous catalyst for ELD. The Au catalytic layer formed on the amine-SiO(2) substrate was stabilized by electrostatic interactions between the positively charged protonated-amine self-assembled monolayer (SAM) and negatively charged AuNPs. Cu films were then electrolessly deposited on Au-catalyzed SiO(2) substrates. The Cu seed layer formed by this method showed a highly conformal and continuous structure. Cu electrodeposition on the 6...
High-density Cu nanoparticles were spontaneously deposited on TaSiN diffusion barrier layers using o...
This paper reports an experimental investigation of 3-N, N-dimethylaminodithiocarbamoyl-1-propane su...
[[abstract]]c2005 Springer - Potential NiMoP barrier/seed layers for Cu interconnects have been succ...
We have developed a novel activation technique for the conformal electroless deposition (ELD) of Cu ...
Continuous electroless deposition of a 10-nm thick layer of Cu was successfully performed on a SiO2/...
Continuous electroless deposition of a 10-nm thick layer of Cu was successfully performed on a SiO2/...
In order to completely fill a 41 nm trench pattern with Cu using electroless deposition (ELD), we in...
To accomplish a void-free Cu filling trench with 60-nm feature sizes, we introduced the self-assembl...
Electroless deposition of a NiWP barrier layer on a SiO2 substrate was investigated for all-wet Cu i...
International audienceThe paper reports the use of self-assembled monolayers (SAMs) of dithiols to i...
International audienceThe paper reports the use of self-assembled monolayers (SAMs) of dithiols to i...
International audienceThe paper reports the use of self-assembled monolayers (SAMs) of dithiols to i...
International audienceThe paper reports the use of self-assembled monolayers (SAMs) of dithiols to i...
Copper electroless deposition ELD was investigated for applications that create a seed layer for C...
[[abstract]]An electrochemical deposition process for copper (Cu) metallization has been developed a...
High-density Cu nanoparticles were spontaneously deposited on TaSiN diffusion barrier layers using o...
This paper reports an experimental investigation of 3-N, N-dimethylaminodithiocarbamoyl-1-propane su...
[[abstract]]c2005 Springer - Potential NiMoP barrier/seed layers for Cu interconnects have been succ...
We have developed a novel activation technique for the conformal electroless deposition (ELD) of Cu ...
Continuous electroless deposition of a 10-nm thick layer of Cu was successfully performed on a SiO2/...
Continuous electroless deposition of a 10-nm thick layer of Cu was successfully performed on a SiO2/...
In order to completely fill a 41 nm trench pattern with Cu using electroless deposition (ELD), we in...
To accomplish a void-free Cu filling trench with 60-nm feature sizes, we introduced the self-assembl...
Electroless deposition of a NiWP barrier layer on a SiO2 substrate was investigated for all-wet Cu i...
International audienceThe paper reports the use of self-assembled monolayers (SAMs) of dithiols to i...
International audienceThe paper reports the use of self-assembled monolayers (SAMs) of dithiols to i...
International audienceThe paper reports the use of self-assembled monolayers (SAMs) of dithiols to i...
International audienceThe paper reports the use of self-assembled monolayers (SAMs) of dithiols to i...
Copper electroless deposition ELD was investigated for applications that create a seed layer for C...
[[abstract]]An electrochemical deposition process for copper (Cu) metallization has been developed a...
High-density Cu nanoparticles were spontaneously deposited on TaSiN diffusion barrier layers using o...
This paper reports an experimental investigation of 3-N, N-dimethylaminodithiocarbamoyl-1-propane su...
[[abstract]]c2005 Springer - Potential NiMoP barrier/seed layers for Cu interconnects have been succ...