Study of magnetic impurity as defects in ZnO grown by pulsed laser deposition

The structural, electrical and magnetic properties of Zn(0.95)Mn(0).(05)O films grown by a pulsed laser deposition system were studied. An X-ray diffraction was tried to verify a crystal structure of the sample. A capacitance-voltage measurement showed that the Zn(0.95)Mn(0).(05)O has electrical properties of an n-type semiconductor, and its carrier concentration appears 5 x 10(18) cm(-3). From a deep level transient spectroscopy measurement, an oxygen vacancy and a Mn-related electron trap in the Zn(0.95)Mn(0.05)O films were appeared as E(c)-0.62 eV and E(c)-0.13 eV, respectively. A magnetic hysteresis of ferromagnetic was measured in the Zn(0.95)Mn(0).(05)O at temperature of 15 K. The hydrogen plasma-annealed sample had larger magnetization than non-annealed sample because of interstitially located hydrogen atoms-mediated double exchange interaction. (C) 2008 Elsevier Ltd. All rights reserved