The effects of composition and macroscopic strain on the structural properties and lattice vibrations of SnxGe1-x solid solutions (SSs) are investigated numerically, employing Tersoff empirical inter-atomic potentials, and experimentally. The calculations provide statistical distributions of bond lengths, pair correlation function and vibrational Raman spectra of the SSs. Using this approach, we are able to evaluate the tin-content-dependent shifts due to the local environment (i.e changes in the atomic mass and bond stiffness) and strain effects in the calculated Raman spectra and compare them to experimental data. The relative importance of the composition dependent effects of the local environment and strain for epitaxial layers of GeSn ...
In this paper, the Raman spectra of GeSn/Ge dual-nanowire heterostructure grown on Ge(1 1 1) substra...
Sn1-xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds w...
This paper reports on the growth and characterization of highly compressive strained GeSn layers on ...
The application of strain into GeSn alloys can effectively modulate the band structures, thus creati...
Ge1-xSnx alloys are new intriguing materials, heralding a major impact on future-generation microele...
We calculate the electronic structure of germanium-tin (Ge1-x Sn x ) binary alloys for 0 ≤ x ≤ 1 usi...
Alloying group IV semiconductors offers an effective way to engineer their electronic properties and...
© 2015 AIP Publishing LLC. We present an extended X-ray absorption fine structure investigation of t...
We investigated Raman vibrational modes in silicon-germanium-tin layers grown epitaxially on germani...
abstract: In materials science, developing GeSn alloys is major current research interest concerning...
International audienceThe structural properties of CVD-grown (Si)GeSn heterostructures were assessed...
In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-grown...
We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germ...
We address the role of non-uniform composition, as measured by energy-dispersive x-ray spectroscopy,...
The structure of the Sn1-xGex random alloys is studied using density functional theory and the coher...
In this paper, the Raman spectra of GeSn/Ge dual-nanowire heterostructure grown on Ge(1 1 1) substra...
Sn1-xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds w...
This paper reports on the growth and characterization of highly compressive strained GeSn layers on ...
The application of strain into GeSn alloys can effectively modulate the band structures, thus creati...
Ge1-xSnx alloys are new intriguing materials, heralding a major impact on future-generation microele...
We calculate the electronic structure of germanium-tin (Ge1-x Sn x ) binary alloys for 0 ≤ x ≤ 1 usi...
Alloying group IV semiconductors offers an effective way to engineer their electronic properties and...
© 2015 AIP Publishing LLC. We present an extended X-ray absorption fine structure investigation of t...
We investigated Raman vibrational modes in silicon-germanium-tin layers grown epitaxially on germani...
abstract: In materials science, developing GeSn alloys is major current research interest concerning...
International audienceThe structural properties of CVD-grown (Si)GeSn heterostructures were assessed...
In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-grown...
We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germ...
We address the role of non-uniform composition, as measured by energy-dispersive x-ray spectroscopy,...
The structure of the Sn1-xGex random alloys is studied using density functional theory and the coher...
In this paper, the Raman spectra of GeSn/Ge dual-nanowire heterostructure grown on Ge(1 1 1) substra...
Sn1-xGex alloys are candidates for buffer layers to match the lattices of III-V or II-VI compounds w...
This paper reports on the growth and characterization of highly compressive strained GeSn layers on ...