Quantum simulation of a heterojunction inter-layer Tunnel FET based on 2-D gapped crystals

session posterInternational audienceWe present a self-consistent quantum simulation of an MoS2-WTe2 inter-layer Tunnel Field-Effect Transistor (TFET). Our calculations are based on the non-equilibrium Green's function (NEGF) formalism with electron-phonon scattering, and accurately account for the device electrostatics by a self-consistent coupling to the Poisson equation. Our results predict an extremely steep sub-threshold swing (SS<;30mV/dec), which is also robust against the channel-length scaling for a carefully designed structure