Transient second harmonic generation and correlation with Ψ-MOSFET in SOI wafers
- Damianos, D.
- Ionica, I.
- Kaminski-Cachopo, A.
- Vitrant, G.
- Cristoloveanu, S.
- Pelissier, D.
- Kryger, M.
- Changala, J.
Publication date
January 2016
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
session posterInternational audienceSilicon-on-Insulator (SOI) wafers are characterized using a non-destructive second harmonic generation (SHG) method. Correlation between the electrical parameters extracted from pseudo-MOSFET characteristics and the SHG signal is demonstrated. A simple quantitative model allows reproduction of the SHG signal curves
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