Second Harmonic Generation: A Non-Destructive Characterization Method for Dielectric-Semiconductor Interfaces
- Ionica, I.
- Damianos, D.
- Kaminski-Cachopo, A.
- Bouchard, A.
- Mescot, X.
- Gri, M.
- Grosa, G.
- Cristoloveanu, S.
- Vitrant, G.
- Blanc-Pélissier, D.
- Lei, M.
- Changala, J.
Publication date
October 2018
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceThis paper reviews the application of second harmonic generation (SHG) to characterize dielectric-semiconductor interfaces used in microelectronics and photovoltaics. Based on non-linear optics, the method is non-destructive, so particularly advantageous for thin films. The theoretical background shows the possibility to access the electric field at interfaces and consequently to have a non-destructive measurement for interface state densities or fixed charges in oxides. Two more detailed examples of application of SHG characterization will be shown: field-effect passivation of silicon using thin film deposited alumina and interface analysis of silicon-on-insulator substrates
Add to ORKG