The INFN R&D: New pixel detector for the High Luminosity upgrade of the LHC
- Dinardo, M. E.
- Zuolo, D.
- Moroni, L.
- Menasce, D.
- Meschini, M.
- Viliani, L.
- Zoi, I.
- Darbo, G.
- Fumagalli, E.
- Furelos, D. V.
- Gaudiello, A.
- Gemme, C.
- Hideyuki, O.
- Messineo, A.
- Dell'Orso, R.
- Boscardin, M.
- Giacomini, G.
- Ronchin, S.
- Dalla Betta, G. F.
- Mendicino, R.
- Sultan, D. M. S.
- Uplegger, L.
DOIAbstract
The high Luminosity upgrade of the CERN-LHC (TIL-LHC) demands for a new high-radiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few 10(16) particles/cm(2) at similar to 3 cm from the interaction point. To this extent the TNFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler-FBK, is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct \Vafer Bonding technique, which allows for the production of sensors with 100 mu m and 130 mu m active thickness for planar sensors, and 130 mu m for 3D sensors, the thinnest ones ever produced so far. The first prototypes of hyb...
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