Add to ORKGThis paper presents a physics-based model of a silicon carbide bipolar junction transistor and verification of its validity through experimental testing. The Fourier series solution is used to solve the ambipolar diffusion equation in the transistor collector region. The model is realized using MATLAB and Simulink. The experimental results of static operation and also the simulated and experimental results of switching waveforms are given
This thesis presents the development of compact model of novel silicon carbide (SiC) Vertical Juncti...
Using the Fourier series solution to the ambipolar diffusion equation, the robustness of the body di...
Silicon carbide (SiC) power semiconductor devices have emerged in the past decade as the most promis...
This paper presents a physics-based model of a silicon carbide bipolar junction transistor and verif...
AbstractThis paper presents the computation simulation models for silicon carbide (SiC) vertical jun...
Silicon carbide (SiC) is considered the most promising material for next-generation power semiconduc...
Silicon carbide (SiC) is considered the most promising material for next-generation power semiconduc...
Silicon carbide (SiC) is considered the most promising material for next-generation power semiconduc...
Silicon carbide (SiC) is considered the most promising material for next-generation power semiconduc...
The superior characteristics of silicon carbide, compared with silicon, have suggested considering t...
A new physics-based IGBT compact model has been developed for circuit simulation of silicon (Si) or ...
A new physics-based IGBT compact model has been developed for circuit simulation of silicon (Si) or ...
Thanks to recent progress in SiC technology, SiC JFETs, MOSFETs and Schottky diodes are now commerci...
Thanks to recent progress in SiC technology, SiC JFETs, MOSFETs and Schottky diodes are now commerci...
This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipo...
This thesis presents the development of compact model of novel silicon carbide (SiC) Vertical Juncti...
Using the Fourier series solution to the ambipolar diffusion equation, the robustness of the body di...
Silicon carbide (SiC) power semiconductor devices have emerged in the past decade as the most promis...
This paper presents a physics-based model of a silicon carbide bipolar junction transistor and verif...
AbstractThis paper presents the computation simulation models for silicon carbide (SiC) vertical jun...
Silicon carbide (SiC) is considered the most promising material for next-generation power semiconduc...
Silicon carbide (SiC) is considered the most promising material for next-generation power semiconduc...
Silicon carbide (SiC) is considered the most promising material for next-generation power semiconduc...
Silicon carbide (SiC) is considered the most promising material for next-generation power semiconduc...
The superior characteristics of silicon carbide, compared with silicon, have suggested considering t...
A new physics-based IGBT compact model has been developed for circuit simulation of silicon (Si) or ...
A new physics-based IGBT compact model has been developed for circuit simulation of silicon (Si) or ...
Thanks to recent progress in SiC technology, SiC JFETs, MOSFETs and Schottky diodes are now commerci...
Thanks to recent progress in SiC technology, SiC JFETs, MOSFETs and Schottky diodes are now commerci...
This thesis presents a unified (n-channel and p-channel) silicon/silicon carbide Insulated Gate Bipo...
This thesis presents the development of compact model of novel silicon carbide (SiC) Vertical Juncti...
Using the Fourier series solution to the ambipolar diffusion equation, the robustness of the body di...
Silicon carbide (SiC) power semiconductor devices have emerged in the past decade as the most promis...