An experimental approach for direct studies of the polarization reversal mechanism in thin film ferroelectric capacitors based on piezoresponse force microscopy (PFM) in conjunction with pulse switching capabilities is presented. Instant domain configurations developing in a 3x3 μm2 capacitor at different stages of the polarization reversal process have been registered using step-by-step switching and subsequent PFM imaging. The developed approach allows direct comparison of experimentally measured microscopic switching behavior with parameters used by phenomenological switching models. It has been found that in the low field regime (just above the threshold value) used in the present study, the mechanism of polarization reversal changes du...
Understanding of polarization reversal mechanisms in ferroelectric films is essential for evaluation...
Visualization of domain structure evolution under an electrical bias has been carried out in ferroel...
MasterThe ferroelectric domain switching is widely investigated as an enabling phenomenon of non-vol...
An experimental approach for direct studies of the polarization reversal mechanism in thin film ferr...
In this study, we review recent advances in PFM studies of micrometer scale ferroelectric capacitors...
Piezoresponse force microscopy is a powerful technique for nm-scale studies but is usually limited b...
Piezoresponse force microscopy is a powerful technique for nm-scale studies but is usually limited b...
Piezoresponse force microscopy is a powerful technique for nm-scale studies but is usually limited b...
Piezoresponse force microscopy is a powerful technique for nm-scale studies but is usually limited b...
A mechanism for the switching behavior of (111)-oriented Pb(Zr,Ti)O3-based 1×1.5 μm2 capacitors has ...
Visualization of domain structure evolution under an electrical bias has been carried out in ferroel...
A mechanism for the switching behavior of (111)-oriented Pb(Zr, Ti)O3-based 1 × 1.5 μm2 capacitors h...
Switching, i.e., polarization reversal, of ferroelectric P(VDF-TrFE) thin films has been investigate...
A mechanism for the switching behavior of (111)-oriented Pb(Zr, Ti)O3-based 1 × 1.5 μm2 capacitors h...
Polarization switching of ferroelectric thin films is essential to the operation of ferroelectric me...
Understanding of polarization reversal mechanisms in ferroelectric films is essential for evaluation...
Visualization of domain structure evolution under an electrical bias has been carried out in ferroel...
MasterThe ferroelectric domain switching is widely investigated as an enabling phenomenon of non-vol...
An experimental approach for direct studies of the polarization reversal mechanism in thin film ferr...
In this study, we review recent advances in PFM studies of micrometer scale ferroelectric capacitors...
Piezoresponse force microscopy is a powerful technique for nm-scale studies but is usually limited b...
Piezoresponse force microscopy is a powerful technique for nm-scale studies but is usually limited b...
Piezoresponse force microscopy is a powerful technique for nm-scale studies but is usually limited b...
Piezoresponse force microscopy is a powerful technique for nm-scale studies but is usually limited b...
A mechanism for the switching behavior of (111)-oriented Pb(Zr,Ti)O3-based 1×1.5 μm2 capacitors has ...
Visualization of domain structure evolution under an electrical bias has been carried out in ferroel...
A mechanism for the switching behavior of (111)-oriented Pb(Zr, Ti)O3-based 1 × 1.5 μm2 capacitors h...
Switching, i.e., polarization reversal, of ferroelectric P(VDF-TrFE) thin films has been investigate...
A mechanism for the switching behavior of (111)-oriented Pb(Zr, Ti)O3-based 1 × 1.5 μm2 capacitors h...
Polarization switching of ferroelectric thin films is essential to the operation of ferroelectric me...
Understanding of polarization reversal mechanisms in ferroelectric films is essential for evaluation...
Visualization of domain structure evolution under an electrical bias has been carried out in ferroel...
MasterThe ferroelectric domain switching is widely investigated as an enabling phenomenon of non-vol...