Add to ORKGWe have successfully nickel doped a boron carbide (B5C) alloy film. The nickel doped boron-carbide (Ni-B5C1+δ) thin films were fabricated from a single source carborane cage molecule and nickelocene [Ni(C5H5)2] using plasma enhanced chemical vapor deposition. Nickel doping transforms the highly resistive undoped film from a p-type material to an n-type material. This has been verified from the characteristics of diodes constructed of Ni-B5C1+δ on both n-type silicon and p-type B5C. The homojunction diodes exhibit excellent rectifying properties over a wide range of temperatures. ©1997 American Institute of Physics
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by...
Metal-rich nickel boride thin films fabricated from boron-containing precursor compounds by a cluste...
We have fabricated boron carbide thin films on Si(111) and other substrates by plasma-enhanced chemi...
We have successfully nickel doped a boron carbide (B5C) alloy film. The nickel doped boron-carbide (...
We have nickel doped boron carbide grown by plasma enhanced chemical vapor deposition. The source ga...
We have grown nickel doped boron–carbon alloy films by the technique of plasma enhanced chemical vap...
The present invention relates to the fabrication of a boron carbide/boron semiconductor devices. The...
The structural and electronic properties of nickeland phosphorus-doped boron–carbon (B5C) alloy thin...
This dissertation summarizes the effects of doping of boron carbide materials. Hydrogen, nickel and ...
The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron c...
Abstract. The structural and electronic properties of nickel-and phosphorus-doped boron–carbon (B5C)...
The introduction metallocenes, in particular ferrocene (Fe(η5-C5H5)2), cobaltocene (Co(η5-C5H5)2), a...
The fabrication, initial structural characterization, and diode measurements are reported for a boro...
We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a ...
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by...
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by...
Metal-rich nickel boride thin films fabricated from boron-containing precursor compounds by a cluste...
We have fabricated boron carbide thin films on Si(111) and other substrates by plasma-enhanced chemi...
We have successfully nickel doped a boron carbide (B5C) alloy film. The nickel doped boron-carbide (...
We have nickel doped boron carbide grown by plasma enhanced chemical vapor deposition. The source ga...
We have grown nickel doped boron–carbon alloy films by the technique of plasma enhanced chemical vap...
The present invention relates to the fabrication of a boron carbide/boron semiconductor devices. The...
The structural and electronic properties of nickeland phosphorus-doped boron–carbon (B5C) alloy thin...
This dissertation summarizes the effects of doping of boron carbide materials. Hydrogen, nickel and ...
The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron c...
Abstract. The structural and electronic properties of nickel-and phosphorus-doped boron–carbon (B5C)...
The introduction metallocenes, in particular ferrocene (Fe(η5-C5H5)2), cobaltocene (Co(η5-C5H5)2), a...
The fabrication, initial structural characterization, and diode measurements are reported for a boro...
We have succeeded in the fabrication of a boron–carbide/boron diode on an aluminum substrate, and a ...
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by...
Active semiconductor devices including heterojunction diodes and thin film transistors are formed by...
Metal-rich nickel boride thin films fabricated from boron-containing precursor compounds by a cluste...
We have fabricated boron carbide thin films on Si(111) and other substrates by plasma-enhanced chemi...