Using a simple tight-binding model and the Kubo formula we have calculated the lateral distribution of the tunneling conductance across a magnetic tunnel junction probed by STM. We find that the presence of an isolated impurity within the barrier layer can cause a spike in the conductance distribution, which is in agreement with recent experiments. We show that the local tunneling magnetoresistance (TMR) is very sensitive to the electronic state of the impurity and to the lateral position of the tip. The latter dramatic variation in TMR could be detected by STM
In this work, we theoretically study the spin-dependent transport in a magnetic tunnel junction (MTJ...
The effect of disorder on the tunneling magnetoresistance (TMR) of a semiconductor tunnel barrier is...
First-principles calculations of electron tunneling transport in nanoscale Ni and Co break-junctions...
Using a simple tight-binding model and the Kubo formula we have calculated the lateral distribution ...
The Green???s-function approach is developed to study the tunneling magnetoresistance (TMR) in magne...
Electronic transport in a nanoscopic magnetic tunnel junction with magnetic particles or magnetic im...
We present a quantum mechanical model of the magnetoresistance in ferromagnetic tunnel junctions ar...
Defects play an important role in the properties of metal oxides which are currently used as barrier...
Calculation of the tunneling magnetoresistance (TMR) of an Fe/MgO/Fe(001) junction with a disordered...
Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunn...
The electron conductance in planar magnetic tunnel junctions with long-range barrier disorder is stu...
The phenomenon of electron tunneling has been known since the advent of quantum mechanics, but conti...
We report an extensive first-principles investigation of impurity-induced device-to-device variabili...
We investigate the tunneling magnetoresistance (TMR) effect using the lattice models which describe ...
Magnetotransport studies performed on electrodeposited Ni/NiO/Co nanojunctions show a broad distribu...
In this work, we theoretically study the spin-dependent transport in a magnetic tunnel junction (MTJ...
The effect of disorder on the tunneling magnetoresistance (TMR) of a semiconductor tunnel barrier is...
First-principles calculations of electron tunneling transport in nanoscale Ni and Co break-junctions...
Using a simple tight-binding model and the Kubo formula we have calculated the lateral distribution ...
The Green???s-function approach is developed to study the tunneling magnetoresistance (TMR) in magne...
Electronic transport in a nanoscopic magnetic tunnel junction with magnetic particles or magnetic im...
We present a quantum mechanical model of the magnetoresistance in ferromagnetic tunnel junctions ar...
Defects play an important role in the properties of metal oxides which are currently used as barrier...
Calculation of the tunneling magnetoresistance (TMR) of an Fe/MgO/Fe(001) junction with a disordered...
Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunn...
The electron conductance in planar magnetic tunnel junctions with long-range barrier disorder is stu...
The phenomenon of electron tunneling has been known since the advent of quantum mechanics, but conti...
We report an extensive first-principles investigation of impurity-induced device-to-device variabili...
We investigate the tunneling magnetoresistance (TMR) effect using the lattice models which describe ...
Magnetotransport studies performed on electrodeposited Ni/NiO/Co nanojunctions show a broad distribu...
In this work, we theoretically study the spin-dependent transport in a magnetic tunnel junction (MTJ...
The effect of disorder on the tunneling magnetoresistance (TMR) of a semiconductor tunnel barrier is...
First-principles calculations of electron tunneling transport in nanoscale Ni and Co break-junctions...