We have performed Co K-edge x-ray absorption fine structure and x-ray absorption near edge structure measurements of Co-doped plasma enhanced chemical vapor phase deposition (PECVD) grown “C2B10Hx” semiconducting boron carbides, using cobaltocene. Cobalt does not dope PECVD grown boron carbides as a random fragment of the cobaltocene source gas. The Co atoms are fivefold boron coordinated (R=2.10±0.02 Å) and are chemically bonded to the icosahedral cages of B10CHx or B9C2Hy. Pairwise Co doping occurs, with the cobalt atoms favoring sites some 5.28±0.02 Å apart
Due to its non-toxic, environmental friendly, availability to easily and low cost production, hydrog...
The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron c...
Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orth...
We have performed Co K-edge x-ray absorption fine structure and x-ray absorption near edge structure...
Cobalt-doped boron carbides produced by simultaneous plasma-enhanced chemical vapor deposition of ca...
The decomposition of cobaltocene and metacarborane (closo-1,7-dicarba-decaborane) under low energy e...
The introduction metallocenes, in particular ferrocene (Fe(η5-C5H5)2), cobaltocene (Co(η5-C5H5)2), a...
Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orth...
Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orth...
I investigated the photofragmentation processes of various closo-carboranes in an effort to understa...
© 2007 American Institute of Physics. The electronic version of this article is the complete one and...
The present invention relates to the fabrication of a boron carbideboron diode on an aluminum substr...
Ion-implanted cobalt atoms into a silver matrix with a layer thickness of about 20 nm were studied b...
\u3cp\u3eThis work investigates the role of the co-reactant for the atomic layer deposition of cobal...
Ion-implanted cobalt atoms into a silver matrix with a layer thickness of about 20 nm were studied b...
Due to its non-toxic, environmental friendly, availability to easily and low cost production, hydrog...
The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron c...
Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orth...
We have performed Co K-edge x-ray absorption fine structure and x-ray absorption near edge structure...
Cobalt-doped boron carbides produced by simultaneous plasma-enhanced chemical vapor deposition of ca...
The decomposition of cobaltocene and metacarborane (closo-1,7-dicarba-decaborane) under low energy e...
The introduction metallocenes, in particular ferrocene (Fe(η5-C5H5)2), cobaltocene (Co(η5-C5H5)2), a...
Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orth...
Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orth...
I investigated the photofragmentation processes of various closo-carboranes in an effort to understa...
© 2007 American Institute of Physics. The electronic version of this article is the complete one and...
The present invention relates to the fabrication of a boron carbideboron diode on an aluminum substr...
Ion-implanted cobalt atoms into a silver matrix with a layer thickness of about 20 nm were studied b...
\u3cp\u3eThis work investigates the role of the co-reactant for the atomic layer deposition of cobal...
Ion-implanted cobalt atoms into a silver matrix with a layer thickness of about 20 nm were studied b...
Due to its non-toxic, environmental friendly, availability to easily and low cost production, hydrog...
The wide band gap, temperature stability, high resistivity, and robustness of semiconducting boron c...
Transition metal doped boron carbides produced by plasma enhanced chemical vapour deposition of orth...