Add to ORKGA minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green\u27s function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign of the spin polarization of tunneling electrons with bias voltage due to the interface minority-spin resonance. This result explains recent experimental data on spin injection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Fe magnetic tunnel junctions
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxia...
We calculate the current spin polarization and the interface resistance of Fe/GaAs and Fe/ZnSe (001)...
The ability to inject spin-polarized carriers into a semiconductor (SC) by electrical means and to c...
A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polari...
In this article we give a review of our recent theoretical studies of the influence of Fe(001) surfa...
In this article we give a review of our recent theoretical studies of the influence of Fe(001) surfa...
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnet...
Fully relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant su...
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnet...
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnet...
Spin dependent electron transport across epitaxial FeGaAs (001) interfaces has been investigated usi...
Spin injection from Fe(001) and (Ga,Mn)As(001) into n-GaAs(001) was investigated using a method whic...
Spin injection from Fe(001) and (Ga,Mn)As(001) into n-GaAs(001) was investigated using a method whic...
We investigate theoretically spin-dependent transport through an epitaxial Fe/GaAs/Fe(001) tunnel ju...
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxia...
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxia...
We calculate the current spin polarization and the interface resistance of Fe/GaAs and Fe/ZnSe (001)...
The ability to inject spin-polarized carriers into a semiconductor (SC) by electrical means and to c...
A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polari...
In this article we give a review of our recent theoretical studies of the influence of Fe(001) surfa...
In this article we give a review of our recent theoretical studies of the influence of Fe(001) surfa...
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnet...
Fully relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant su...
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnet...
We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions. The tunneling magnet...
Spin dependent electron transport across epitaxial FeGaAs (001) interfaces has been investigated usi...
Spin injection from Fe(001) and (Ga,Mn)As(001) into n-GaAs(001) was investigated using a method whic...
Spin injection from Fe(001) and (Ga,Mn)As(001) into n-GaAs(001) was investigated using a method whic...
We investigate theoretically spin-dependent transport through an epitaxial Fe/GaAs/Fe(001) tunnel ju...
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxia...
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxia...
We calculate the current spin polarization and the interface resistance of Fe/GaAs and Fe/ZnSe (001)...
The ability to inject spin-polarized carriers into a semiconductor (SC) by electrical means and to c...