Symmetry broken spin reorientation transition in epitaxial MgO/Fe/MgO layers with competing anisotropies

The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions (MTJs) with competing PMA and in-plane anisotropies remains unclear. Here we report on the field induced nonvolatile broken symmetry magnetization reorientation transition from the in-plane to the perpendicular (out of plane) state at temperatures below 50 K. The samples were 10 nm thick Fe in MgO/Fe(100)/MgO as stacking components of V/MgO/Fe/MgO/Fe/Co double barrier MTJs with an area of 20 × 20 μm2. Micromagnetic simulations with PMA and different second order anisotropies at the opposite Fe/MgO interfaces qualitatively reproduce the observed broken symmetry spin reorientation transition. Our findings open the possibilities to develop multistate epitaxial spintronics based on competing magnetic anisotropies.This work has been supported in part by Spanish MINECO (MAT2015-66000-P, EUIN2017-87474), SPINORBIT (MDM-2014-0377) and Comunidad de Madrid (NANOFRONTMAG-CM S2013/MIT-2850). C.T. acknowledges “EMERSPIN” grant ID PN-III-P4-ID-PCE-2016-0143, No. UEFISCDI:22/12.07.201