4x25 Gbps polarization diversity silicon photonics receiver with transfer printed III-V photodiodes

We demonstrate the transfer-printing-based integration of III-V substrate-illuminated p-i-n photodetectors onto a 4-wavelength-channel silicon photonics polarization diversity receiver circuit. 4x25 Gbps operation is demonstrated for 2.5 nm wavelength channel spacing in the C-band. Transfer printing is an enabling technology for massively parallel heterogeneous III-V-on-Si integration