This paper describes the simulation and fabrication of the first planar Gunn diode based on InGaAs on InP substrate. Gunn devices were simulated using the Sentaurus Device software. The fabricated planar Gunn diodes are 1.3 µm long and 120 micron wide and the measured and simulated results are in excellent agreement
We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlG...
In this paper we report some recent progress in 77GHz InP Gunn device process development. Specifica...
© 2018 Wiley Periodicals, Inc. The planar Gunn diode offers the potential of microwave, milli-metric...
This paper describes the design, characterization and fabrication of a planar In0.53Ga0.47 As based ...
We present the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, oper...
We present the co-fabrication of planar Gunn diodes and high electron mobility transistors (HEMTs) o...
We present detailed design, fabrication and characterization of In<sub>0.23</sub>Ga<s...
Indium gallium arsenide (InGaAs) planar Gunn diodes with on chip matching circuits were fabricated o...
In the present dissertation, GaAs and GaN Gunn diodes have been investigated with respect to microwa...
The planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, whi...
This work presents the implementation of planar Gunn diodes and pseudomorphic high electron mobility...
This letter reports the highest fundamental oscillator operating frequency of 120 GHz for gallium ar...
The paper describes the planar Gunn diode, which is well suited to providing milli-metric and tera h...
In this study, we have investigated emission characteristic of InGaAs- based light emitter that de...
This work presents two different approaches for the implementation of pseudomorphic high electron mo...
We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlG...
In this paper we report some recent progress in 77GHz InP Gunn device process development. Specifica...
© 2018 Wiley Periodicals, Inc. The planar Gunn diode offers the potential of microwave, milli-metric...
This paper describes the design, characterization and fabrication of a planar In0.53Ga0.47 As based ...
We present the first results of a planar Gunn diode made in In0.53Ga0.47As on an InP substrate, oper...
We present the co-fabrication of planar Gunn diodes and high electron mobility transistors (HEMTs) o...
We present detailed design, fabrication and characterization of In<sub>0.23</sub>Ga<s...
Indium gallium arsenide (InGaAs) planar Gunn diodes with on chip matching circuits were fabricated o...
In the present dissertation, GaAs and GaN Gunn diodes have been investigated with respect to microwa...
The planar Gunn diode offers the potential of microwave, milli‐metric and THz‐based oscillators, whi...
This work presents the implementation of planar Gunn diodes and pseudomorphic high electron mobility...
This letter reports the highest fundamental oscillator operating frequency of 120 GHz for gallium ar...
The paper describes the planar Gunn diode, which is well suited to providing milli-metric and tera h...
In this study, we have investigated emission characteristic of InGaAs- based light emitter that de...
This work presents two different approaches for the implementation of pseudomorphic high electron mo...
We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlG...
In this paper we report some recent progress in 77GHz InP Gunn device process development. Specifica...
© 2018 Wiley Periodicals, Inc. The planar Gunn diode offers the potential of microwave, milli-metric...
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