Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/98692/1/ApplPhysLett_99_263105.pd
We report the successful growth of In-rich InGaN/GaN nanostructures such as multiple quantum wells (...
We have fabricated GaN quantum dots (QDs) in AlN confined layer structures by molecular beam epitaxy...
<div> Emission properties of self-assembled green-emitting InGaN quantum dots (QDs) </div> <di...
We adopted the simple top‐down etching to fabricate site‐ and dimension‐controlled InGaN quantum dot...
InxGa1−xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays toppe...
Quantum technologies such as quantum communication and computation may one day revolutionize the lan...
We have measured photoluminescence (PL) and time-resolve photoluminescence (TRPL) from InGaN/GaN qua...
The authors gratefully acknowledge funding by the state of Bavaria and the bilateral project of the ...
We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer sc...
© 2017 American Chemical Society. Group III-nitride materials have drawn a great deal of renewed int...
Electrons and holes in the QD can occupy only a given set of states with discrete energy levels, suc...
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operat...
A device that is able to produce single photons is a 5 fundamental building block for a number of qu...
Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nano...
GaN/InGaN heterostructures were grown by molecular beam epitaxy on sapphire (0001). The photolumines...
We report the successful growth of In-rich InGaN/GaN nanostructures such as multiple quantum wells (...
We have fabricated GaN quantum dots (QDs) in AlN confined layer structures by molecular beam epitaxy...
<div> Emission properties of self-assembled green-emitting InGaN quantum dots (QDs) </div> <di...
We adopted the simple top‐down etching to fabricate site‐ and dimension‐controlled InGaN quantum dot...
InxGa1−xN quantum dots have been fabricated by the selective growth of GaN micropyramid arrays toppe...
Quantum technologies such as quantum communication and computation may one day revolutionize the lan...
We have measured photoluminescence (PL) and time-resolve photoluminescence (TRPL) from InGaN/GaN qua...
The authors gratefully acknowledge funding by the state of Bavaria and the bilateral project of the ...
We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer sc...
© 2017 American Chemical Society. Group III-nitride materials have drawn a great deal of renewed int...
Electrons and holes in the QD can occupy only a given set of states with discrete energy levels, suc...
The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operat...
A device that is able to produce single photons is a 5 fundamental building block for a number of qu...
Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nano...
GaN/InGaN heterostructures were grown by molecular beam epitaxy on sapphire (0001). The photolumines...
We report the successful growth of In-rich InGaN/GaN nanostructures such as multiple quantum wells (...
We have fabricated GaN quantum dots (QDs) in AlN confined layer structures by molecular beam epitaxy...
<div> Emission properties of self-assembled green-emitting InGaN quantum dots (QDs) </div> <di...
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