A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlled with a gate voltage is considered. We show that a single electron is able to induce a collective spontaneous magnetization of the Mn spins, overcoming the short range antiferromagnetic interactions, at a temperature order of 1 K, 2 orders of magnitude above the ordering temperature in bulk. The magnetic behavior of the dot depends dramatically on the parity of the number of electrons in the dot.Grants No. MAT2002-04429-c03-01, No. MAT2003-08109-C02-01, Ramon y Cajal Program (MCyT,Spain), Fundación Ramón Areces, and UA/GRE03-15
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do ...
Electric-field manipulation of ferromagnetism has the potential for developing a new generation of e...
We analyzed the photoluminescence intermittency generated by a single paramagnetic spin localized in...
A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlle...
We study a single-electron transistor (SET) based upon a II–VI semiconductor quantum dot doped with ...
The notion of artificial atom relies on the capability to change the number of carriers one by one i...
Inserting magnetic impurities into semiconductor bulk materials leads to a ferromagnetic behavior. O...
We report on the reversible electrical control of the magnetic properties of a single Mn atom in an ...
A photoexcited II-VI semiconductor quantum dots doped with a few Mn spins is considered. The effects...
We present a theoretical study of magnetic interaction in quantum dots with magnetic $Mn^{2+}$ in do...
We present a microscopic theory of the magnetic field dependence of the optical properties of II-VI ...
We investigate theoretically CdTe quantum dots containing a single Mn2+ impurity, including the sp-d...
We have studied the dynamic properties of a single spin (Mn impurity or resident electron) in a II-V...
Semiconductor quantum dots represent nanoscale systems with few electrons confined in a semiconducto...
There is currently interest in developing control over the spin of a single Manganese (Mn) ion, the ...
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do ...
Electric-field manipulation of ferromagnetism has the potential for developing a new generation of e...
We analyzed the photoluminescence intermittency generated by a single paramagnetic spin localized in...
A (II,Mn)VI diluted magnetic semiconductor quantum dot with an integer number of electrons controlle...
We study a single-electron transistor (SET) based upon a II–VI semiconductor quantum dot doped with ...
The notion of artificial atom relies on the capability to change the number of carriers one by one i...
Inserting magnetic impurities into semiconductor bulk materials leads to a ferromagnetic behavior. O...
We report on the reversible electrical control of the magnetic properties of a single Mn atom in an ...
A photoexcited II-VI semiconductor quantum dots doped with a few Mn spins is considered. The effects...
We present a theoretical study of magnetic interaction in quantum dots with magnetic $Mn^{2+}$ in do...
We present a microscopic theory of the magnetic field dependence of the optical properties of II-VI ...
We investigate theoretically CdTe quantum dots containing a single Mn2+ impurity, including the sp-d...
We have studied the dynamic properties of a single spin (Mn impurity or resident electron) in a II-V...
Semiconductor quantum dots represent nanoscale systems with few electrons confined in a semiconducto...
There is currently interest in developing control over the spin of a single Manganese (Mn) ion, the ...
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do ...
Electric-field manipulation of ferromagnetism has the potential for developing a new generation of e...
We analyzed the photoluminescence intermittency generated by a single paramagnetic spin localized in...