Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction

This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase analysis 2θ-scan proved the composition of GaN (0002) and (0004) at 34.63o and 72.98o,respectively. Rocking curve φ-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of ~60o. From x-ray rocking curve (XRC) ω-scan, screw and mix dislocation density is found as 2.85 × 109 cm-2, while pure edge dislocation density is found as 2.23 × 1011 cm-2