The A exchange parameter and its temperature dependence were determined for epitaxially grown magnetic thin garnet films. The method is based on the measurement of saturation magnetization, uniaxial anisotropy field, and zero-field stripe domain period. The temperature dependence of domain-wall energy density and domain-wall width was also determined. A correlation was found between domain-wall pinning field and domain-wall parameters, which can be useful for the experimental verification of theories that describe the coercivity on the basis of domain-wall parameters
The stress dependent magnetic parameters of epitaxial garnet films were measured. Lattice distortion...
Magnetic garnet films represent a wide family of materials. By the proper choice of chemical composi...
Magnetic garnet films represent a wide family of materials. By the proper choice of chemical composi...
The coercive properties of magnetically uniaxial liquid-phase epitaxy garnet films were investigated...
The temperature dependences of domain wall pinning field and of anisotropy field in magnetic garnets...
The temperature dependence of domain wall coercive field, HCW, of an epitaxial magnetic rare earth g...
The temperature dependence of domain wall coercive field, HCW, of an epitaxial magnetic rare earth g...
The temperature dependence of the domain-wall coercive field of epitaxial magnetic garnets films ha...
The temperature dependence of the domain-wall coercive field of epitaxial magnetic garnet films was ...
Abstract. The temperature dependence of domain wall coercive field, H,,,, of an epitaxial magnetic r...
The effect of heat treatment in air atmosphere was investigated on an epitaxially grown magnetic gar...
The steep temperature dependence of the domain wall coercive field. HCW(T), of highly anisotropic ra...
The magnetic parameters (magnetization, uniaxial anisotropy field, uniaxial anisotropy constant, coe...
The steep temperature dependence of the domain wall coercive field. HCW(T), of highly anisotropic ra...
The experimental value of the domain wall coercive field does not depend on magnetic parameters and ...
The stress dependent magnetic parameters of epitaxial garnet films were measured. Lattice distortion...
Magnetic garnet films represent a wide family of materials. By the proper choice of chemical composi...
Magnetic garnet films represent a wide family of materials. By the proper choice of chemical composi...
The coercive properties of magnetically uniaxial liquid-phase epitaxy garnet films were investigated...
The temperature dependences of domain wall pinning field and of anisotropy field in magnetic garnets...
The temperature dependence of domain wall coercive field, HCW, of an epitaxial magnetic rare earth g...
The temperature dependence of domain wall coercive field, HCW, of an epitaxial magnetic rare earth g...
The temperature dependence of the domain-wall coercive field of epitaxial magnetic garnets films ha...
The temperature dependence of the domain-wall coercive field of epitaxial magnetic garnet films was ...
Abstract. The temperature dependence of domain wall coercive field, H,,,, of an epitaxial magnetic r...
The effect of heat treatment in air atmosphere was investigated on an epitaxially grown magnetic gar...
The steep temperature dependence of the domain wall coercive field. HCW(T), of highly anisotropic ra...
The magnetic parameters (magnetization, uniaxial anisotropy field, uniaxial anisotropy constant, coe...
The steep temperature dependence of the domain wall coercive field. HCW(T), of highly anisotropic ra...
The experimental value of the domain wall coercive field does not depend on magnetic parameters and ...
The stress dependent magnetic parameters of epitaxial garnet films were measured. Lattice distortion...
Magnetic garnet films represent a wide family of materials. By the proper choice of chemical composi...
Magnetic garnet films represent a wide family of materials. By the proper choice of chemical composi...