A generalized rewriting model is defined for flash memory that represents stored data and permitted rewrite operations by a directed graph. This model is a generalization of previously introduced rewriting models of codes, including floating codes, write-once memory codes, and buffer codes. This model is used to design a new rewriting code for flash memories. The new code, referred to as trajectory code, allows stored data to be rewritten as many times as possible without block erasures. It is proved that the trajectory codes are asymptotically optimal for a wide range of scenarios. In addition, rewriting codes that use a randomized rewriting scheme are presented that obtain good performance with high probability for all possible rewrite se...
Memories whose storage cells transit irreversibly between states have been common since the start of...
Flash memory is an electronic non-volatile memory with wide applications. Due to the substantial imp...
Flash memory is an electronic non-volatile memory with wide applications. Due to the substantial imp...
A generalized rewriting model is defined for flash memory that represents stored data and permitted ...
Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to incr...
Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to incr...
Abstract—A generalized rewriting model is defined for flash memory that represents stored data and p...
Memories whose storage cells transit irreversibly between states have been common since the start o...
Memories whose storage cells transit irreversibly between states have been common since the start o...
A constrained memory is a storage device whose elements change their states under some constraints. ...
A constrained memory is a storage device whose elements change their states under some constraints. ...
A constrained memory is a storage device whose elements change their states under some constraints. ...
Memories whose storage cells transit irreversibly between states have been common since the start of...
Memories whose storage cells transit irreversibly between states have been common since the start of...
Memories whose storage cells transit irreversibly between states have been common since the start of...
Memories whose storage cells transit irreversibly between states have been common since the start of...
Flash memory is an electronic non-volatile memory with wide applications. Due to the substantial imp...
Flash memory is an electronic non-volatile memory with wide applications. Due to the substantial imp...
A generalized rewriting model is defined for flash memory that represents stored data and permitted ...
Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to incr...
Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to incr...
Abstract—A generalized rewriting model is defined for flash memory that represents stored data and p...
Memories whose storage cells transit irreversibly between states have been common since the start o...
Memories whose storage cells transit irreversibly between states have been common since the start o...
A constrained memory is a storage device whose elements change their states under some constraints. ...
A constrained memory is a storage device whose elements change their states under some constraints. ...
A constrained memory is a storage device whose elements change their states under some constraints. ...
Memories whose storage cells transit irreversibly between states have been common since the start of...
Memories whose storage cells transit irreversibly between states have been common since the start of...
Memories whose storage cells transit irreversibly between states have been common since the start of...
Memories whose storage cells transit irreversibly between states have been common since the start of...
Flash memory is an electronic non-volatile memory with wide applications. Due to the substantial imp...
Flash memory is an electronic non-volatile memory with wide applications. Due to the substantial imp...