We report in situ Raman scattering studies of electrochemically top gated VO2 thin film to address metal-insulator transition (MIT) under gating. The room temperature monoclinic insulating phase goes to metallic state at a gate voltage of 2.6V. However, the number of Raman modes do not change with electrolyte gating showing that the metallic phase is still monoclinic. The high-frequency Raman mode A(g)(7) near 616 cm(-1) ascribed to V-O vibration of bond length 2.06 angstrom in VO6 octahedra hardens with increasing gate voltage and the B-g(3) mode near 654 cm-1 softens. This shows that the distortion of the VO6 octahedra in the monoclinic phase decreases with gating. The time-dependent Raman data at fixed gate voltages of 1 V (for 50 minute...
International audienceWe report on the crystallographic phases and their epitaxial relationships obs...
Two-dimensional electron systems offer enormous opportunities for science discoveries and technologi...
We investigated the inhomogeneous electronic properties at the surface and interior of VO2 thin film...
We report in situ Raman scattering studies of electrochemically top gated VO2 thin film to address m...
ABSTRACT Despite the relatively simple stoichiometry and structure of VO2, many questions regarding ...
The development of new phases of matter at oxide interfaces and surfaces by extrinsic electric field...
International audienceStructural and electronic phase transitions behavior of two polycrystalline VO...
In VO2, the explicit origin of the insulator-to-metal transition is still disputable between Peierls...
Electrolyte gating with ionic liquids is a powerful tool for inducing novel conducting phases in cor...
International audienceAs a strongly correlated metal oxide, VO2 inspires several highly technologica...
Abstract Phase competition in transition metal oxides has attracted remarkable interest for fundamen...
Raman and combined infrared transmission and reflectivity measurementswere carried out at room tempe...
Raman and combined infrared transmission and reflectivity measurements were carried out at room temp...
Abstract VO2 is a highly correlated electron system which has a metal-to-insulator transition (MIT) ...
International audienceWe report on the crystallographic phases and their epitaxial relationships obs...
Two-dimensional electron systems offer enormous opportunities for science discoveries and technologi...
We investigated the inhomogeneous electronic properties at the surface and interior of VO2 thin film...
We report in situ Raman scattering studies of electrochemically top gated VO2 thin film to address m...
ABSTRACT Despite the relatively simple stoichiometry and structure of VO2, many questions regarding ...
The development of new phases of matter at oxide interfaces and surfaces by extrinsic electric field...
International audienceStructural and electronic phase transitions behavior of two polycrystalline VO...
In VO2, the explicit origin of the insulator-to-metal transition is still disputable between Peierls...
Electrolyte gating with ionic liquids is a powerful tool for inducing novel conducting phases in cor...
International audienceAs a strongly correlated metal oxide, VO2 inspires several highly technologica...
Abstract Phase competition in transition metal oxides has attracted remarkable interest for fundamen...
Raman and combined infrared transmission and reflectivity measurementswere carried out at room tempe...
Raman and combined infrared transmission and reflectivity measurements were carried out at room temp...
Abstract VO2 is a highly correlated electron system which has a metal-to-insulator transition (MIT) ...
International audienceWe report on the crystallographic phases and their epitaxial relationships obs...
Two-dimensional electron systems offer enormous opportunities for science discoveries and technologi...
We investigated the inhomogeneous electronic properties at the surface and interior of VO2 thin film...