Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO₂ gate dielectrics grown by atomic layer deposition

© 2009 American Institute of Physics. The electronic version of this article is the complete one and can be found at: http://dx.doi.org/10.1063/1.3269579DOI: 10.1063/1.3269579High performance solution-processed n-channel organic field-effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with low operating voltages (3 V) are demonstrated using a high-k hafnium dioxide gate dielectric grown by atomic layer deposition. Devices exhibit excellent n-channel performance with electron mobility values up to 0.14 cm²/V s, threshold voltages of ∼ 0.3 V, current on/off ratios >10⁵, and very low values of subthreshold slope ( ∼ 140 mV/decade)