Silicon oxide films were deposited by reactive evaporation of SiO. Parameters such as oxygen partial pressure and substrate temperature were varied to get variable and graded index films. Films with a refractive index in the range 1.718 to 1.465 at 550 nm have been successfully deposited. Films deposited using ionized oxygen has the refractive index 1.465 at 550 nm and good UV transmittance like bulk fused quartz. Preparation of graded index films was also investigated by changing the oxygen partial pressure during deposition. A two layer antireflection coating at 1064nm has been designed using both homogeneous and inhomogeneous films and studied their characteristics
The observation of transmission spectra in the infrared (2 to 16 μ) gives a sensitive and non-destru...
Oxide coatings have been prepared by PIAD by means of a Leybold Syrus pro 1100 deposition system. Fo...
AbstractA new process for deposition of silicon oxide films with excellent passivation properties wa...
Silicon oxide films were deposited by reactive evaporation of SiO. Parameters such as oxygen partial...
Silicon has been the choice for photonics technology because of its cost, compatibility with mass pr...
Silicon dioxide films are extensively used as protective, barrier and also low index films in multil...
The optinzum deposition parameters for 7'102 and SiO2 films for the multi-layer coatings are re...
Using a large-scale HWCVD in-line deposition system with maximum deposition areas of 500 × 600 mm₂ S...
This study focuses on the atomic layer deposition (ALD) of high quality SiO2 thin films for optical ...
Using the chemical reaction between silicone oil vapor and ozone gas at atmospheric pressure and abo...
SiOx (x = 0- 2) films were deposited on BK-7 substrates by a low frequency reactive magnetron sputte...
conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with sila...
Silicon and silicon related films were deposited onto glass slides and silicon wafers by electron-be...
8 págs.; 11 figs.The transmittance of silicon monoxide films prepared by thermal evaporation was mea...
Thin films of nonstoichiometric silicon oxide (SiOx with x < 2) have been studied extensively dur...
The observation of transmission spectra in the infrared (2 to 16 μ) gives a sensitive and non-destru...
Oxide coatings have been prepared by PIAD by means of a Leybold Syrus pro 1100 deposition system. Fo...
AbstractA new process for deposition of silicon oxide films with excellent passivation properties wa...
Silicon oxide films were deposited by reactive evaporation of SiO. Parameters such as oxygen partial...
Silicon has been the choice for photonics technology because of its cost, compatibility with mass pr...
Silicon dioxide films are extensively used as protective, barrier and also low index films in multil...
The optinzum deposition parameters for 7'102 and SiO2 films for the multi-layer coatings are re...
Using a large-scale HWCVD in-line deposition system with maximum deposition areas of 500 × 600 mm₂ S...
This study focuses on the atomic layer deposition (ALD) of high quality SiO2 thin films for optical ...
Using the chemical reaction between silicone oil vapor and ozone gas at atmospheric pressure and abo...
SiOx (x = 0- 2) films were deposited on BK-7 substrates by a low frequency reactive magnetron sputte...
conventional plasma enhanced chemical vapor deposition (PECVD) at low temperature/pressure with sila...
Silicon and silicon related films were deposited onto glass slides and silicon wafers by electron-be...
8 págs.; 11 figs.The transmittance of silicon monoxide films prepared by thermal evaporation was mea...
Thin films of nonstoichiometric silicon oxide (SiOx with x < 2) have been studied extensively dur...
The observation of transmission spectra in the infrared (2 to 16 μ) gives a sensitive and non-destru...
Oxide coatings have been prepared by PIAD by means of a Leybold Syrus pro 1100 deposition system. Fo...
AbstractA new process for deposition of silicon oxide films with excellent passivation properties wa...