We have studied the metal-insulator transition at integer fillings in a triply degenerate Hubbard model using the Lanczos method. The critical Coulomb interaction strength U-c, is found to depend strongly on the band filling, with U-c similar to root 3 W (W is the bandwidth) at half filling for this case with threefold degeneracy. We discuss the implications of our results on metal-insulator transitions in strongly correlated systems in general, and on the unusual electronic ground state of the alkali-metal-doped fullerenes, in particular. [S0163-1829(99)11003-8]
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition...
3noWe explore the ground-state properties of the two-band Hubbard model with degenerate electronic b...
Les effets des corrélations électroniques et d'une distribution aléatoire des atomes sont incorporés...
We have studied the metal-insulator transition at integer fillings in a triply degenerate Hubbard mo...
Mott-Hubbard metal-insulator transitions in $N$-fold degenerate Hubbard models are studied within th...
Within dynamical mean-field theory, we study the metal-insulator transition of a twofold orbitally d...
Degenerate Hubbard models are studied using the Generalized-Gutzwiller-Approximation. It is found th...
Starting from the exact solution of the Hubbard model in the atomic limit, and treating the hopping ...
An extension of the Hubbard model, earlier introduced, is studied using exact diagonalization and qu...
We study the metal-insulator transition of the d-dimensional Hubbard model by treating the hopping t...
Calculations of the single-particle spectral function for the two-band Hubbard model as a function o...
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied ...
SCTE - 2016, 20th International Conference on Solid Compounds of Transition Elements, Preprint, Abst...
We study the simplified Hubbard (SH) model in the presence of a transverse field in the infinite-dim...
We study the Mott transition in the Hubbard model within the dynamical mean field theory approach wh...
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition...
3noWe explore the ground-state properties of the two-band Hubbard model with degenerate electronic b...
Les effets des corrélations électroniques et d'une distribution aléatoire des atomes sont incorporés...
We have studied the metal-insulator transition at integer fillings in a triply degenerate Hubbard mo...
Mott-Hubbard metal-insulator transitions in $N$-fold degenerate Hubbard models are studied within th...
Within dynamical mean-field theory, we study the metal-insulator transition of a twofold orbitally d...
Degenerate Hubbard models are studied using the Generalized-Gutzwiller-Approximation. It is found th...
Starting from the exact solution of the Hubbard model in the atomic limit, and treating the hopping ...
An extension of the Hubbard model, earlier introduced, is studied using exact diagonalization and qu...
We study the metal-insulator transition of the d-dimensional Hubbard model by treating the hopping t...
Calculations of the single-particle spectral function for the two-band Hubbard model as a function o...
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied ...
SCTE - 2016, 20th International Conference on Solid Compounds of Transition Elements, Preprint, Abst...
We study the simplified Hubbard (SH) model in the presence of a transverse field in the infinite-dim...
We study the Mott transition in the Hubbard model within the dynamical mean field theory approach wh...
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition...
3noWe explore the ground-state properties of the two-band Hubbard model with degenerate electronic b...
Les effets des corrélations électroniques et d'une distribution aléatoire des atomes sont incorporés...